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تحریکِ پاکستان میں مادرِ ملت کا کردار

تحریک پاکستان میں مادر ِملت کا کردار
نحمدہ ونصلی علی رسولہ الکریم امّا بعد فاعوذ بااللہ من الشیطن الرجیم
بسم اللہ الرحمن الرحیم
معزز سامعین اور میرے ہم مکتب شاہینو!
آج مجھے جس موضوع پر اظہار خیال کرناہے وہ ہے:’’مادرِ ملت محترمہ فاطمہ جناح ‘‘
جنابِ صدر!
مادرملت سے مراد فاطمہ جناح ہے۔ محترمہ فاطمہ جناح بانی ٔپاکستان قائد اعظم محمد علی جناح رحمۃ اللہ علیہ کی چھوٹی بہن تھیں۔ ان کی ساری زندگی بانی ٔپاکستان اور پاکستان کے لیے وقف تھی۔ محترمہ فاطمہ جناح قائد اعظم رحمۃ اللہ علیہ کی معتمد ساتھی اور تحریک پاکستان میں ان کی معاون اور رفیق کار ہیں۔ تحریک پاکستان کے ہر موڑ پر محترمہ کی خدمات ناقابل فراموش ہیں۔ انہوں نے اپنی پوری زندگی قومی خدمات کے لیے وقف کر دی تھی۔ تحریک پاکستان کے دوران خواتین کی مختلف تنظیموں کی راہنمائی کے علاوہ عام مسلمان خواتین کے مسائل میں گہری دلچسپی لیتی رہیں۔ آپ خواتین میں بے حد مقبول تھیں وہ ہمیشہ مسلمان خواتین کو تحریک پاکستان کے لیے عملی کام کرنے پر آمادہ کرتیں۔ انہیں ان کی اہمیت کااحساس دلاتے ہوئے قومی خدمت کے لیے تیار کرتیں۔ خواتین کے محاذ پر تحریک پاکستان کے تمام امور کی نگرانی محترمہ فاطمہ جناح کے ذمہ تھی۔
قیام پاکستان کے بعد بھی آپ کی قومی خدمات کا سلسلہ جاری رہا ۔تعلیم نسواں کا مسئلہ ہو یا مہاجرین کی آباد کاری کشمیری مہا جر ین کی دستگیری ہو ،بہبود اطفال اور حفظان صحت کے مسائل آپ کی خدمات ہر شعبے میں جلی حروف میں لکھے جانے کے قابل ہیں۔محترمہ فاطمہ جناح کی قومی خدمات کی بناپر انہیں قوم نے بجا طور پر مادر ملت کا لقب دیا۔ مادر ملت نے قومی مسائل میں اپنے بھائی کی طرح اپنی صحت اور پیرانہ سالی کی بھی پرواہ نہیں کی۔ 1964ء کی تحریک...

PENINGKATAN KUALITAS PEMBELAJARAN MENYIMAK CERPEN DENGAN MENGGUNAKAN MEDIA REKAMAN PEMBACAAN CERPEN PADA SISWA KELAS XI IPA2 SMA NEGERI 1 BONTOTIRO KABUPATEN BULUKUMBA

Improving the Quality of Learning to Listen to Short Stories by Using Recorded Media for Reading Short Stories for Class XI IPA2 Students of SMA Negeri 1 Bontotiro, Bulukumba Regency.” This study aims to describe the improvement in the quality of learning to listen to short stories using short story reading recording media for students of class XI IPA2 SMA Negeri 1 Bontotiro, Bulukumba Regency.             The results of the study prove that improving the quality of learning to listen to short stories using short story reading recording media in class XI IPA2 SMA Negeri 1 Bontotiro Bulukumba Regency at the planning stage found an increase in the ability of teachers in the field of study to plan better learning implementation in cycle II. In the implementation stage, there was an increase in student activity during the learning process, such as the sincerity, discipline, and self-confidence of students following the learning process. The evaluation stage found an increase in the results of the short story listening test, showing that in the first cycle 56.09% of students experienced mastery learning, and in the second cycle it reached 97.56% who experienced learning mastery. Based on the results of the study, it was concluded that the recording media for reading short stories could improve the quality of learning to listen to short stories in class XI IPA2 SMA Negeri 1 Bontotiro, Bulukumba Regency

Synthesis and Characterization of Silicon Carbide Layers Grown on Silicon Substrates by Low Pressure Chemical Vapor Deposition Technique

Wide bandgap semiconductor materials have gained considerable attention for fabrication of electronic devices that can operate at high power, high frequency and high temperature for various applications where conventional semiconductor cannot work satisfactorily. These materials have potential applications in optoelectronics, such as light emitting diodes (LEDs), in the blue and ultraviolet (UV) wavelengths regions. It is widely recognized that the performance, yield, reliability and degradation behavior of devices are adversely affected due to presence of defects. In this study synthesis and characterization of most common polytypes 3C, 4H and 6H-SiC are performed. 3C-SiC layers grown on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350 0C) in a low pressure chemical vapor deposition (LPCVD) reactor. Typical Fourier transform infrared (FTIR) spectrum revealed a dominant peak at 800 cm -1 due to Si-C bond excitation. Large area x-ray diffraction spectra showed single crystalline cubic structure of 3C-SiC (111) and 3C-SiC (200) at 2θ angles of 28.280 and 34.080 on Si (111) and Si (100) substrates, respectively. Cross-sectional viewed revealed by scanning electron microscopy (SEM) display up to 104 μm thick SiC layer. Energy dispersive spectroscopy (EDS) of the grown layers demonstrated a stoichiometric growth of SiC. Surface roughness and morphology of the films were studied using atomic force microscopy (AFM). It was observed that resistivity of the as-grown layers increased with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacancies having activation energy 0.59 ± 0.02 eV. The p-type 6H- SiC were grown by fast sublimation method. The epilayer is co-doped with boron– nitrogen with free carrier concentration 3 × 1017 cm-3 (NA–ND). The detail investigations of electrical properties of deep level defects in the grown sample were carried out by deep level transient spectroscopy (DLTS). A hole H1 majority carriers and electron E1 minority carriers trap were observed in the device having activation energies Ev + 0.24 eV and Ec - 0.41 eV, respectively. The capture cross-section (trap concentration) of H1 and E1 deep levels were found to be 5 × 10-19 cm2 and 2 × 1 015 cm-3 (1.6 × 10-16 cm2 and 3 × 1015 cm-3) respectively. Considering the background involvement of aluminum in growth reactor and comparison of the obtained data with the available literature, the H1 defect was identified as aluminum acceptor and a sound justification was given to correlate the E1 defect to a nitrogen donor. The n-type 6H-SiC layers were also grown by sublimation method. To study the deep level defects in n-type 6H-SiC, as-grown, nitrogen doped and nitrogen- boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having free carrier concentration (ND–NA) 2.0 × 1012, 2× 1016 and 9× 1015 cm-3, respectively, DLTS was performed. The DLTS measurement of ELS-1 and ELS-11 samples revealed three electron trap A, B and C having activation energies EC – 0.39, Ec – 0.67 and Ec – 0.91 eV, respectively. The isochronal annealing study of the samples demonstrated that the observed electron traps were stable up to 750 oC. While DLTS spectra of sample ELS-131 showed only single ‘A’ level. This observation indicated that levels B and C in ELS-131 were compensated by boron and/or nitrogen–boron complex. A comparison with the published data revealed that A, B and C were related to E1/E2, Z1/Z2 and R levels, respectively in n-type 6H-SiC. The 4H-SiC layers were grown on p-type Si (100) substrate by simple evaporation method. The chamber was evacuated using mechanical and diffusion pump with base pressure of 5 × 10-7 torr. A mixture of Si and C60 powder of high purity (99.99%) with weight ratio of 1:1 was used as source material and was evaporated by Mo boat. A high current of 210A was used to increase the temperature of boat in the vicinity of 1100 0C. The temperature of substrate was fixed at 300 0C. The distance between substrate and boat was kept 10 cm and total evaporation time was 3 hours. To study the crystalline quality of as-grown material, x-ray diffraction, FTIR and photoluminescence (PL) were performed. The x- ray spectrum consist of six peaks at 2Θ angles 25.50, 28.5, 30.70, 32.70, 36.10 and 59.00 and four of them were related to 4H-SiC. Typical Fourier transform infrared (FTIR) spectrum revealed a dominant peak at 790 cm-1 due to Si-C bond excitation. The PL spectrum of grown samples showed strong band to band emission at 3.22 eV seemed an evident of 4H-SiC.
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