تحديات العولمة للشباب ومواجهتها في ضوء السيرة النبوية

Challenges are part of the ways of life, and the Islamic world is suffering of the rupture and differentiates internal conflicts, and the chaos of thought and delayed civilization. The most prominent of these challenges, which the Islamic world is facing, is the phenomenon of globalization. Which included the three worlds, and sought to dominate them, and melt the people’s properties and this is what precipitated the emergence of numerous drawbacks, and the researcher specially mentioned, negative aspects of identity, ethics and the environment. Young people who are the hope and asset of this nation are able to turn dreams into realities, and hopes to practical projects, and ambitions to the visible achievements. They are worthwhile, and the most capable and powerful to meet these challenges. If they grasp the necessary requirements that qualify and stables them to face it and take advantage of its goodness, and avoid disadvantage. But if they stationed, and failed to do their duty, they offered loss and destruction to themselves and nation. Curriculum should be prepared in accordance with the system of Islamic values, which are the individual configuration integrated, in belief, thought, and behavior, and attention to the development of the curriculum, and make it combines tradition and modernity, and the distinction between fixed and variable, and have superior mental abilities. All these issues are addressed in this research the negative impact of globalization on the environment, ethics and then showed the importance of taking care of the human development of young people, through various training programs that earn young people skills, science, and sophisticated learning methodical thinking, proper planning, and positive participation in society, and carry responsibility, and foster in them the ability to dialogue and to develop in them the spirit of creativity and scientific research and rational dealing with crises, and tribulations, and the ability to solve problems and meet the challenges of globalizatio

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.