Rights of Non-Muslim Minorities in a Muslim Country in the Light of Qur’an and Sunnah

The Issue of the rights of non-Muslim minorities in Muslim countries has been one of the most burning issues in this era. It has been highlighted by both Muslim and non-Muslim writers that they are mistreated in Muslim countries. This paper discusses the rights of non-Muslims in a Muslim country in the light of Quran, Sunnah and Islamic history. These rights are the protection of rights and freedom of belief, right to protection of property, honour, assurance of disability, poverty and old age, right of freedom in religion, language and culture, work and profession in government services, equal rights in the society and justice. It will be shown that in Muslim countries, all non-Muslim minorities have their equal rights and same citizen status. This paper ends by providing some suggestions in solving contemporary non-Muslim problems in Muslim countries.

Analytical and Optimization Based Modeling Techniques to Assess the Performance of Submicron Sic Mesfets

In therst part of the thesis, a detailed analytical mathematical model describing I ? V characteristic of a submicron SiC MESFET has been presented. Poisson''s equation with appropriate boundary conditions is solved to determine potential distribution inside the channel. The location of Schottky barrier gate with corresponding depletion layer width where the carrier''s velocity gets saturated is evaluated. It has been demonstrated that the depletion modi cation underneath the Schottky barrier gate causesnite output conductance in the saturation region of operation. I ? V characteristics of submicron SiC MESFET have been modeled and compared with conventional velocity saturation techniques, where the depletion layer after the onset of current saturation has been treated as constant. It is noted that the proposed depletion layer modi cation technique, when incorporated in the device modeling, gave15.9% improvement in the modeled out characteristics of a submicron SiC MESFET. In the second part, an improved empirical model has been presented to simulate DC and pulsed I ? V characteristics of SiC MESFETs. A comparative analysis has been carried out by employing swarm optimization technique and it has been established that the proposed model, dependent upon the device characteristics, is7-24% better than its counterparts. Based on simulated characteristics, numerous parameters de ning the device geometrical structure have been estimated to a good degree of accuracy. It has been shown that the developed technique is versatile enough and can be a useful tool for device simulation softwares. In the third part, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modi ed due to intense transverse electriceld and/or self-heating e ects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for x devices meant for high power applications. A set of expressions for AC small signal elements have been developed using Ids and their dependence on device biasing have been discussed. The validity of the proposed technique has been demonstrated using experimental data.