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Improvement of a thermophlici fungal strain for cellulase production by Chemical and UV Mutagenesis.

Thesis Info

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Author

M. Mohsin Javed

Department

Department of Botany

Program

PhD

Institute

Government College University

Institute Type

Public

City

Lahore

Province

Punjab

Country

Pakistan

Degree Starting Year

2003

Degree End Year

2006

Subject

Botany

Language

English

Link

https://library.gcu.edu.pk/Thesis/PhD/Mohsin03Phd03.pdf 

Added

2021-02-17 19:49:13

Modified

2023-01-06 19:20:37

ARI ID

1676711006018

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احقر بہاری

احقرؔ بہاری مرحوم
(معین الدین اور دائی)
بہار کی سرزمین جس قدر مردم خیز ہے، اسی قدر مردم خوار بھی ہے، خدا جانے کیا بات ہے کہ وہاں کے لوگوں کو شہرت طلبی سے شرم آتی ہے، اہل وطن بھی قدرشناسی نہیں کرتے، اس لئے یہاں کے اچھے اچھے جوہر قابل بلبلہ کی طرح ابھرتے اور دب جاتے ہیں، اگر بہار کے کچھ لوگوں کے نام زندہ ہیں تو یہ وہی ہیں جن کا آوازۂ کمال دوسرے صوبوں تک پہنچا اور وہاں کے لوگوں نے قدرشناسی کرکے ان کو شہرت بخشی، بہار کے ان گمنام اہل کمال میں ایک احقر بہاری مرحوم ہیں، یہ بہار کے ایک پرانے کہنہ مشق استاد سخن تھے، شعر و شاعری کے بڑے بڑے معرکے طے کئے تھے، پچاس ساٹھ برس کے ریاض میں دیوان یادگار چھوڑا ذیل کے صفحات میں ناظرین کو اسی گمنام صاحب کمال سے روشناس کرنا ہے۔
مختصر حالات: بشارت حسین نام، احقر تخلص، ضلع عظیم آباد پٹنہ کے ایک گاؤں بڑا ڈیہہ میں پیدا ہوئے، سال ولادت ۱۲۷۶؁ھ ہے، ان کے والد ماجد شیخ اکبر حسین اس قریہ کے ایک ممتاز متمول اور ذی عزت رئیس تھے، وہ وہیں پیدا ہوئے اور اپنی تمام زندگی وہیں گزار دی۔
احقر مرحوم کی ابتدائی تعلیم اسی گاؤں ہی میں ہوئی، فارسی اور عربی کی ابتدائی کتابیں وہاں پڑھا کر ان کے والد نے تعلیم کی غرض سے ۱۲۸۸؁ھ میں ان کو پٹنہ بھیجا، مولوی خدابخش صاحب جو اس وقت کے ایک لائق عالم تھے، ان کی تعلیم کے لئے مقرر کئے گئے، کچھ عرصہ ان کے زیر تعلیم رہنے کے بعد وہ بہار چلے آئے اور یہیں متعدد علماء کے زیر سایہ علم کی خوشہ چینی کرتے رہے، باایں ہمہ ان میں عربی کی کوئی ایسی اچھی لیاقت نہ تھی، لیکن فارسی اچھی جانتے تھے۔
۱۲۹۵؁ھ میں ان نکاح...

Analysis of Consumer Assessment in Small and Medium Enterprises

Raja Abon Makmur Lestari's business has good potential, resulting in considerable business competition. One of the businesses that produce shredded is Small and Medium Enterprises (UKM) Raja Abon Makmur Lestari. This business must apply a consumer-oriented marketing concept. The application of this concept is to determine the marketing mix consisting of product, price, promotion, and place. The purpose of this study was to analyze consumer assessments of the various attributes of shredded products and evaluate the results of the shredded product marketing mix strategy. The method used in this research is descriptive analysis, with the 4P marketing mix approach. The marketing mix strategy evaluation design involves internal parties, namely business owners, and external parties, namely consumers. The results of the discussion show that consumer assessment of products has guaranteed quality, consumer ratings of prices are in accordance with quality, consumer assessments of shredded product distribution are easy to obtain and consumer assessments of promotion by word of mouth are very efficient and easy to get information on social media. The evaluation results of the marketing mix for shredded products are in the range of 101-125. Based on this total value, it can be concluded that all the variables of the marketing mix carried out by the king of shredded and prosperous sustainable have been effective.

Deposition and Characterization of Ii – Vi Binary and Ternary Semiconductor Thin Films

Modern thin film solar cell based on the absorbing layers of Cadmium Telluride (CdTe) and Copper Indium Gallium Selenide (CIGS) have achieved laboratories efficiencies close to 20%. In these solar cells CdS thin films are used as a buffer layer. Due to the narrow energy band gap of CdS (~ 2.4 eV) about 18% of the solar energy is absorbed in the buffer layer. Therefore, it is desirable to replace CdS window layer with another suitable material having wide energy band gap to transmit maximum solar energy to the active region of the device. Secondly, for industrial production of solar cells, it is required to replace CdS with a nontoxic buffer layer material. In most of the cases close space sublimation (CSS) is used to construct these thin film solar cells. But the process of CSS is not amenable to industrial manufacturing. Another problem associated with conventional CSS is that one cannot decouple source and substrate process environs. Therefore, alternate thin film fabrication technologies are also of interest. The main focus of this thesis is to investigate some of the binary and ternary II-VI group semiconductor thin films such as ZnSe, ZnS, ZnS x Se 1-x and Mg x Zn 1-x O to explore the alternate of CdS for the photovoltaic applications. Thin films of these materials with appropriate properties are also desirable for various other applications. Ion-induced electron yield of ZnS thin films was also measured. In addition, a modified closed space sublimation system was developed to eliminate the purported disadvantages of CSS. Thin films of ZnSe were deposited on soda lime glass by thermal evaporation and annealed in vacuum at various temperatures. XRD studies revealed that as-deposited films were polycrystalline in nature with cubic structure. The grain size and crystallinity increased, whereas dislocations and strains decreased with the increase of annealing temperature. The optical energy band gap estimated from the transmittance data was in the range of 2.60 to 2.67 eV. Similarly, refractive index of the films was found to increase with the annealing temperature. The Root Mean Square (RMS) roughness of the films increased from 1.5 nm to 2.5 nm with the increase of annealing temperature. Resistivity of the films decreased linearly with the increase of annealing temperature. ZnS thin films were deposited by modified close spaced sublimation instrument on the glass substrates. The energy band gap of the films deposited at the substrate temperature of 150, 250 and 350 o C was 3.52, 3.58 and 3.63 eV respectively. These films were then bombarded with 2-10 keV energy pulsed Ar + beam and their secondary electron yield xwas measured. The most important result of this study was that the electron yield of ZnS films having same composition was different. Monte Carlo simulations performed to interpret these experimental findings showed that the dissimilar electron yields of ZnS films is due to the combined effect of energy band gap, surface barrier potential and density of the films. The ZnS x Se 1-x films were deposited on soda lime glass substrates by thermal evaporation. XRD measurement showed that ZnS x Se 1-x films are polycrystalline in nature with the preferred orientation along [111]. It was observed that the lattice constant decreases and the optical energy band gap increases with the sulfur content of the film. These results are in good agreement with the properties of ZnS x Se 1-x films deposited by various other methods. Additionally, it was observed that the refractive index of a ZnS x Se 1-x film decreases with increasing sulfur content. The results suggest that the lattice constants, optical energy band gap and refractive index of ZnS x Se 1-x film can be tailored by changing sulfur content of the film. Mg x Zn 1-x O thin films were deposited on glass and quartz substrates by electron beam evaporation and effect of the Mg content of the film on its structural, optical and electrical properties were investigated. The structure, surface morphology, optical transmittance, band gap, refractive index and electrical resistivity found to depend on the Mg content of the film. The structure of the films having Mg content in the range of 1- 0.74 was cubic, mixed cubic-hexagonal phases for x = 0.47 and hexagonal phase for x = 0. It was observed that the optical band gap increases from 3.30 to 6.09 eV, refractive index at 550 nm decreases from 1.99 to 1.75, transmittance increases from about 70% to 90% and electrical resistivity increases from 0.5 to 1.48×10 6 Ω-cm with the increase of Mg concentration in the film from x = 0 to 1. Laser Induced Damage Threshold (LIDT) of Mg x Zn 1-x O thin films was also measured by using Nd:YAG laser. The LIDT of Mg x Zn 1-x O films was found in the range from 20 – 25 J/cm 2 .