سیالکوٹ ایک تاریخی اور ادبی خطہ رہا ہے۔ اس کی تاریخ پانچ ہزار سال پر محیط ہے۔ سیالکوٹ تاریخی ، جغرافیائی ، ثقافتی،سماجی،تہذیبی،علمی اور ادبی لہاظ سے دوسرے عالمی ادبی شہروں سے کم نہیں۔سیالکوٹ کو اقبال و فیض کے مولد ہونے کا بھی لازوال فخر حاصل ہے۔ بقول گوپی چند نارنگ :
’’ بیسویں صدی کے اردو ادب کو سیالکوٹ کھا گیا نصف اوّل اقبال اور نصف دوم فیض‘‘۔
سیالکوٹ کی مٹی بڑی زرخیز اور مردم خیز ہے ۔ سر زمینِ سیالکوٹ نے علم و ادب اور فنونِ لطیفہ کے میدانوں میں گراں قدر خدمات سر انجام دی ہیں۔ داغ دہلوی اور اقبال کے کئی شاگرد سیالکوٹ کے رہنے والے تھے۔ اقبال و فیض کے علاوہ ارض اقبال میں متعدد مشاہیر پیدا ہوئے جن کے شعری و نثری سرمائے میں آ فاقی موضوعات ، اصناف اور اسالیب موجود ہیں۔ اس طرح خطہء سیالکوٹ کا تخلیقی ادب عالمی ادب کے ہم پلہ ہے۔ راقم الحروف نے اپنی تخلیق بعنوان’’ ارضِ اقبال ۔ آ فاقیت کے آ ئینے میں‘‘ سیالکوٹ سے منسلک مختلف شعرا و ادبا کی ادبی خدمات کا تحقیقی و تنقیدی جائزہ لیا ہے۔ یہ تحقیقی وتنقیدی جائزہ ادبی خدمات کے علاوہ ادبی رجحانات، ادبی اصناف، اسالیب اور اقبال شناسی کے حوالے سے بھی ہے۔
یہ تصنیف پندرہ مقالات پر مشتمل ہے ۔ جس میں حوالہ جات ، حواشی اور تعلیقات کا خاص خیال رکھا گیا ہے۔ یہ مقالات ہائر ایجوکیشن کمیشن اسلام آباد ،پاکستان کے منظور شدہ ریسرچ جرنلز میں شائع ہو چکے ہیں۔
ڈاکٹر نصیر احمد اسد
سیالکوٹ، پنجاب، پاکستان
غیر مسلموں کے حقوق اور انسانی جان کی حرمت : عہدِنبویﷺو خلفائےراشدین کی روشنی میں Islam guarantees the protection of life, property, honour, and dignity of all the members of society, regardless of their religion, colour, race or ethnicity. Sanctity of human life is the fundamental issue and Islam emphasized on it the most. Holy Quran declared the murder of a single person as the killing of all humanity. Islam always secured the rights of non-Muslims. Protecting the lives, dignity and property of non-Muslim living in an Islamic state is a duty of a Muslims in general and the Islamic State in particular. The manner in which the rights of non-Muslims were protected in the era of the Prophet (S.A.W) and the era of the Rightly Guided Caliphs is unprecedented. The Prophet (S.A.W) gave this protection constitutional and legal status through his teachings and practice. Our Holy Prophet Muhammad (S.A.W) declared that “The one who killed any Dhmmī would not get the fragrance of Paradise though its fragrance can be sensed at a distance of forty years journey”. In the era of the righteous caliphs, the rights of non-Muslims were also safeguarded. This article is a description of the rights of non-Muslims with reference to the sanctity of human life in Islam. It also throws light on the unique teachings of Islam regarding the fundamental rights of minorities in the period of the Prophet and the Rightly Guided Caliphs. A descriptive and analytical research methodology will be used in this research to obtain results and recommendations. The expected results and recommendations of the study will guide the Muslims and non-Muslims to harmonize the social set up around the globe.
Composite nano-films of TiO2-Ge were grown by ‘pulsed laser deposition’ (PLD) technique on Si wafers while deposition conditions were changed. Firstly single run deposition for a longer time (30 min) with varying Ge concentration in N and p-type polished Si wafers. Secondly films were deposited as single, bi- and tri-layers on n-type polished and unpolished Si wafers such that each layer was deposited for 5 mins. In the first batch of samples target-substrate distance was varied to find its effect on optoelectronic properties of film. It was observed that Ge concentration decreased as target-substrate separation was increased. Also substrate type and separation between target and substrate effected the crystallinity, optical & electrical response of film. On p-type (111) Si wafer thin films showed dominant amorphous behaviour with decreasing Ge concentration. Thin films deposited on Si wafer showed an improvement in crystallinity as target-substrate distance was increased resulting in decrease in crystallite size, increase in defects and strains. Raman spectroscopic results and EDX analysis confirmed the Ge presence in all the samples. Ge identification in Raman and its non-identification through XRD may possibly be due to non-crystalline nature of Ge. Composite nature was identified by the Ge peak related to cubic structure rather than tetragonal (i.e. did not follow crystalline structure of TiO2) i.e. no doping occurred. Films grown at a distance of 6 cm from the target showed better optoelectronic properties which exhibited minimum reflectance but maximum direct and indirect absorption transitions it is also confirmed by its photoluminescence (PL) response. It has a constant refractive index with a stable extinction coefficient. This film demonstrated a positive dielectric constant and a negligible dielectric loss confirming its stable optoelectronic behaviour which was confirmed by its I-V response. Better optoelectronic response for the above mentioned film can be positively due to strains and size reduction of crystallite size. In the second batch of experiment single, di- and tri-layered composite films were grown on polished and n-type unpolished Si (100) wafer. Amorphous nature was observed dominantly in all the samples. Di-layered film deposited on polished n-type Si wafer showed a better optical response which is due to minimum variation in its n. Maximum direct and indirect transitions are also observed in it and a broad PL peak is observed around 2-3.5 eV. Although it does not show better electrical properties as compared to tri-layered thin films but overall optoelectronic response of this film is better as compared to other samples. The reason may be the outcome of crystalline nature of film. Thin films (for 5 min) shows reduced crystallinity and hence optoelectronic response in comparison to that for 30 min, this variance can be attributed to the reduced thickness of film. Single layer film has variable n responsible for lower dielectric constant and hence lowest electrical response.