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Home > Thickness Dependence of Schottky Junction of Wse2 Field Effect Transistor

Thickness Dependence of Schottky Junction of Wse2 Field Effect Transistor

Thesis Info

Author

Muhammad Waqas

Supervisor

Muhammad Waqas Iqbal

Program

Mphil

Institute

Riphah International University

Institute Type

Private

City

Lahore

Province

Punjab

Country

Pakistan

Thesis Completing Year

2019

Thesis Completion Status

Completed

Page

xiv, 48 . : ill. (col.) ; 30 cm. + CD.

Language

English

Other

Includes bibliographical references.; Submitted in partial fulfillment of the requirements for the degree of Master of Philosophy in Physics.; Thesis (M.Phil)--Riphah International University, 2019; English; Call No: WAQ 621.3

Added

2021-02-17 19:49:13

Modified

2023-02-19 12:33:56

ARI ID

1676711371429

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