کل شیٔ ھالک الا وجھہ
آہ!کیوں کرکہئے کہ فلک علم وفضل کاآفتاب رخشندہ غروب ہوگیا۔بزم انس وقدس کی شمع فروزاں گل ہوگئی۔درج تقوی وطہارت کالعل شب چراغ گم ہوگیا۔شریعت وطریقت کے اسرار ورموز کامحرم جاتارہا۔اخلاق ومکارم اسلامی کے ایوان میں خاک اُڑنے لگی۔جو کل تک لاکھوں انسانوں کے لیے طبیب عیسیٰ نفس تھا خود وہ موت کی آغوش میں جا سویا۔ملت بیضا کاسہارا، فرزندان توحید کی امیدوں کامرجع، پیروان دین محمدی کی تمناؤں کا مرکز راہی ملک عدم ہوگیا۔یعنی حضرت مولانا سید حسین احمد صاحب مدنی نے ۵/دسمبر کوبمقام دیوبند سہ پہر میں داعیٔ اجل کولبیک کہا۔انا ﷲ وانا الیہ راجعون۔
حضرت مولانا کی وفات ایک فرد،ایک شخص اورایک انسان کی موت نہیں ہے۔بلکہ ایک خاص دور، ایک عہد اورحیات ملّی کے صحیفہ کے ایک باب کا اختتام ہے۔حضرت مولانا گنگوہی اور حضرت شیخ الہند نے اپنے مقدس ہاتھوں سے جو چمن لگایا تھا مولانا اس چمن کی آخری بہار تھے۔ حضرت حاجی امداد اﷲ اور نانوتوی نے شریعت وطریقت، علم وعمل اورتقدس وطہارت کی جوبزم سجائی تھی، اجل کی باد صر صر اُس کے چراغ بجھاتی رہی مگر ساتھ ہی چراغ سے چراغ بھی روشن ہوتے رہے اوربزم کبھی تاریک نہیں ہوئی لیکن اب اس بزم کاآخری چراغ بجھ گیا۔روشنی کی جگہ ظلمت نے لے لی۔تاریکی چھا گئی اوربزم کی بساط الٹ گئی۔
اسلام میں اعلیٰ اورمکمل زندگی کاتصور یہ ہے کہ تزکیۂ نفس اورتصفیۂ باطن کے ساتھ فکرونظر کی بلندی اورجہدوعمل میں پختگی اورہمہ گیری ہواوریہ سب کچھ تعلق باﷲ کے واسطہ سے ہو۔مولانا اس دور میں اس معیار پر جس طرح پورے اُترتے تھے ہندوپاک توکیا پورے عالم اسلام میں اس کی نظیر نہیں مل سکتی۔ علم و فضل کایہ عالم کہ اسرار وغوامض شریعت وطریقت ہروقت ذہن میں مستحضر۔کسی سائل نے کوئی مسئلہ پوچھا نہیں کہ معلومات کاسمندر ابلنے لگا۔چنانچہ حضرت مجدد الف...
The government of General Ayub Khan (Former President of Pakistan) established an Institution in 1960, in the name of Idarah Tahqeeqat Islami (Islamic Research Institute). Dr, Fazlur Rahman, was the visiting professor at the institute remained on the rank of director of the year 1961 to 768 in seven years. And later, he serves as an advisor to the Islamic Ideology council. The writer who was published by the Institute of Islamic Research was the first editor of "Fikr-o - Nazar”. The scholars were considered as 'expertise of logic and philosophy' as 'interpretation of the Qur'an'. It is mentioned in the various verses of the Prophet (peace and blessings of Allah be upon him). The slaughtering of zakat in 'zakat' animal slaughtering 'basic laws and family planning' matters of marriage and Sunnah, such as the month of revelation, and their opinions have earned great reputation. And because of which they were accused of denying the heavenly nature of the Qur'an. Therefore, the first step towards Islamic thinking regarding the Islamic idea was to put an eye on Islamic law and religious beliefs on Islam. According to their plan, the difference between the Quranic verses and the verses and the laws of the law, is the difference. Regarding the meanings, his axis received: The beginning of the tradition and the meaning of 'the law of the law' is the word and the law. Islamic Laws' Principles Concernedly speaking about issues like Fiqh and Qa'as and al-Azai speak.
In therst part of the thesis, a detailed analytical mathematical model describing I ? V characteristic of a submicron SiC MESFET has been presented. Poisson''s equation with appropriate boundary conditions is solved to determine potential distribution inside the channel. The location of Schottky barrier gate with corresponding depletion layer width where the carrier''s velocity gets saturated is evaluated. It has been demonstrated that the depletion modi cation underneath the Schottky barrier gate causesnite output conductance in the saturation region of operation. I ? V characteristics of submicron SiC MESFET have been modeled and compared with conventional velocity saturation techniques, where the depletion layer after the onset of current saturation has been treated as constant. It is noted that the proposed depletion layer modi cation technique, when incorporated in the device modeling, gave15.9% improvement in the modeled out characteristics of a submicron SiC MESFET. In the second part, an improved empirical model has been presented to simulate DC and pulsed I ? V characteristics of SiC MESFETs. A comparative analysis has been carried out by employing swarm optimization technique and it has been established that the proposed model, dependent upon the device characteristics, is7-24% better than its counterparts. Based on simulated characteristics, numerous parameters de ning the device geometrical structure have been estimated to a good degree of accuracy. It has been shown that the developed technique is versatile enough and can be a useful tool for device simulation softwares. In the third part, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modi ed due to intense transverse electriceld and/or self-heating e ects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for x devices meant for high power applications. A set of expressions for AC small signal elements have been developed using Ids and their dependence on device biasing have been discussed. The validity of the proposed technique has been demonstrated using experimental data.