Meningkatkan Kinerja Karyawan dengan Kecerdasan Emosional dan Kemampuan Kerja di Kota Dumai

Penelitian ini dilaksanakan pada Perushaaan Kontraktor dan Suplayer di Kota Dumai yang kinerja karyawannya kurang baik karena banyak perkejaan yang tidak diselesaikan sesuai dengan yang diberikan oleh perusahaan  Tujuan Penelitian ini melihat apakah Kinerja di Perusahaan ini dipengaruhi oleh Kecerdasan Emosional dan Kemampuan Kerja, Jumlah Sampel dalam Penelitian ini sebanyak 59 Orang Karyawan Perusahaan di Kota Dumai menggunakan Metode Sensus dimana Seluruh Karyawan dijadikan Sampel Penelitian , Metode Pengumpulan Data menggunakan Kuesioner dan Intervieew kepada Pimpinan Perusahaan di Kota Dumai, Teknik Analisis Data menggunakan Analisis Deskriptif Kuantitatif , Hasil dalam Penelitian ini Nilai korelasi (R) yang dihasilkan adalah sebesar 0,812. Maka dapat disimpulkan bahwa terdapat hubungan yang sangat kuat antara variabel independen terhadap variabel dependen. Sedangkan nilai R Square sebesar 0,659. Hal ini menunjukkan bahwa variabel Kecerdasan Emosional dan Kemampuan Kerja secara keseluruhan memberikan pengaruh sebesar 65,9% terhadap variabel Kinerja, Sedangkan sisanya sebesar 34,1% dipengaruhi oleh variabel lain yang tidak diteliti dalam Penelitiian ini.

Modeling Techniques of Submicron Gaas Mesfets and Hemts

This thesis discusses the electrical response of submicron GaAs MESFETs and HEMTs to develop a physical model. Nine different FET models have been presented and their ability to simulate submicron GaAs MESFET characteristics are checked. To demonstrate the validity of a model, I-V characteristics of short channel MESFETs are simulated and compared with experimental data. The accuracy of a model is reported by evaluating its RMS error values. A comprehensive new model is developed to simulate I-V characteristics of short channel GaAa FETs. It has been demonstrated that the proposed model is a comprehensive one, capable of simulating DC characteristics of GaAs MESFETs including those having significant non-ideal Schottky barrier response. The model has also been applied successfully to I-V characteristics of GaAs HEMTs. The Schottky barrier interfacial layer dependent performance of submicron GaAs MESFETs has been discussed by using their output and transfer characteristics. The mobility of carriers, scattering from the channel into the Schottky barrier gate, increases significantly for the devices which have a relatively thicker interfacial layer. The negative effects of increased carriers’ mobility from MESFET Schottky barrier gate are discussed and a plausible explanation is given for reduced barrier lowering in the presence of interfacial layer. Based on the proposed explanation the definition of threshold voltage has been redefined involving the concept of interfacial layer thickness. A technique is developed to estimate intrinsic small signal parameters of GaAs MESFETs and HEMTs. In the proposed technique DC characteristics are first evaluated. Once a good DC match is attained then small signal parameters are evaluated. To check the validity of the proposed technique submicron GaAs MESFETs and HEMTs of varying gate length have been simulated. It has been shown that the proposed method is accurate as well as efficient in estimating AC parameters of GaAs FETs by using their DC characteristics, and could be employed as a useful tool in device simulation software.