25. Al-Furqan/The Criterion
I/We begin by the Blessed Name of Allah
The Immensely Merciful to all, The Infinitely Compassionate to everyone.
25:01
Blessed is the One WHO has sent down The Criterion on to HIS Servant,
so that he may be a warner to humankind - to all conscious beings against the consequences of its disobedience.
25:02
It is HE to WHOM belongs the Sovereignty over the celestial realm and the terrestrial world.
And HE has never taken to HIMSELF a son/child,
nor has HE any partner in the Sovereignty.
HE created/creates everything and measured/measures their proportion exactly.
25:03
Yet they have taken to worship entities other than HIM -
those entities cannot create anything, while they are themselves created, and
they have no power to harm or benefit anyone, not even to themselves, and
they have no power over death, nor over life, nor over raising the dead to life - the Resurrection.
25:04
And those who disbelieve allege:
‘This - the Qur’an – is nothing but a fabrication.
He - Muhammad - has forged it, and some other people helped him with it.’
In fact, by alleging this they have done great injustice and committed a great blunder and
a perjury.
25:05
And they also allege:
These are just ‘ancient tales!’
He has had them written down,
and these are dictated to him by morning and evening in order to memorize and then narrate it further.
25:06
Say O The Prophet:
‘This - Qur’an - is being sent down onto me - by the One WHO Knows the secrets of the celestial realm and the terrestrial world.
Surely,...
The Mughal period (1592-1737 CE) rightly claims to produce an abundant amount of literature on history and culture of Sindh. This article aims to highlight impacts of Mughal rule on politics, administration and society of Sindh. There were a number of official writers emerged, who endeavored for drawing a plausibly adequate picture of the Mughal administration. Their narrations have been qualified by the quality and expanse of available information. Studies of the Mughal administration in Sindh are, for the most part, relied upon notable works significantly include some indigenous historical sources. This article fundamentally based upon the two such masterpieces titled Tarikh-i-Sindh alias Tarikh-i-Masumi (c. 1593 CE) and the Mazhar-iShahjahani (c. 1634 CE). Both of these compilations offer an overview of the dynamics of the Mughal politics concerning different administrative units and offices. Besides the political history, some new aspects in terms of socioeconomic conditions are also evident on the basis of the first hand record. I anticipate that this endeavor would reveal some extent the true perception about the politics and society in Sindh under the Mughals.
This dissertation reports the fabrication and characterization of CeO2 based nonvolatile memory devices as metal/insulator/metal structures. The RRAM devices have been deposited under various deposition conditions using different electrodes, with different stack morphology and various thicknesses of active CeO2 layers. In the case of Zr/CeOx/Pt devices a forming-free bipolar resistive switching has been observed. HRTEM and EDX studies have indicated the formation of a ZrOy layer at the Zr/CeOx interface. The observed resistive switching has been suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies. The presence of oxygen vacancies has been noticed through XRD and confirmed by EDX in the nano-polycrystalline CeOx film and in the nonstoichiometric ZrOy interfacial layer. Similar results have been observed for the resistive switching characteristics of Pt/CeOx/TiN devices as confirmed by XPS, but in this case, the observed resistive switching behavior can be attributed to an interfacial layer TiON, as determined by HRTEM image. That is why this device exhibits low operation current (100 μA), high ON/OFF resistance ratio (>105) and good retention both at room temperature and at 85 °C. More interestingly, the TaN/CeOx/Pt based devices exhibited bipolar resistive switching even without any requirement of electroforming step. For these devices, TaON interlayer, as verified by HRTEM and XRD, has been suggested to play the main role in the resistive switching mechanism which stems from connection and disconnection of filamentary paths made of oxygen vacancies. On inserting an ultrathin metallic layer in Ti/CeO2/Al/CeO2/Pt stack, the resultant device has demonstrated dual resistive switching behaviour. These devices could switch between the two operating modes merely by choosing the polarity of RESET voltage. In addition, the requirement of identical current compliance during the SET process of both xxvii modes provides an additional advantage of simplicity in device operation. On the basis of analyses of current–voltage characteristics and temperature dependence of resistance, resistive switching mechanism has been proposed to be originated from a combined effect of field induced diffusion of oxygen and Al ions in the sandwiched ceria matrix. Without metallic insertion, bilayer Ti/CeO2-x:CeO2/ITO memory stacks have demonstrated stable bipolar resistive switching behavior with low-voltage operation and good endurance. In addition, the narrow cycle-to-cycle and device-to-device distributions of resistance switching parameters have been proposed to originate from the electric field induced drift of defects preferably along grain boundaries in the bilayer structure of ceria. On using both electrodes of conducting oxide (instead of metals), fully transparent (with >80% optical transmission) RRAM devices in ITO/CeO2/ITO format (with weak polycrystalline CeO2 phase) have been found to exhibit reliable bipolar switching behavior. The dual role of ITO polycrystalline films as defects reservoir as well as source of O2- ions in these devices becomes the cause of good data retention (over 104 s) and reliable performance both at room temperature and 85 oC. In almost all the devices studied in this PhD work, Ohmic and Poole Frenkel conduction mechanisms are found to be responsible for charge transport in the low- and high-resistance states respectively. The observed RS characteristics and performance of various CeO2-based devices have shown their potential as candidates for future non-volatile memory applications.