GENERALIZED ANXIETY DISORDER AND ITS ASSOCIATED FACTORS AMONG FEMALE STUDENTS

Background and Aim: To determine the Generalized Anxiety Disorder and its association with factors like hormonal changes, chronic illness among female students of university. Methodology: Perceptions and preferences of Female Students were determined in well-organized Institute (Superior University) with ages between 16-28 years old of all disciplines. Electronic self-administrated questionnaires consisting of two parts; demographics factors (Age, Gender, Designation, education Discipline, socioeconomic status and medical history) and Generalized Anxiety Disorder GAD-7, were then filled by the participated female students with sample size of 231. Then the perceptions and preferences were evaluated using a pre validated questionnaire (GAD-7) from previous research article. Results: A total of 231 responses were returned. All respondents were females. About (62.7%) of total respondents reported feeling nervous, anxious, or on edge to some degree; 10% of respondents said that they experience this feeling nearly every day. A significant proportion of respondents reported mild to moderate anxiety levels. The mean score of anxiety scale was 3.87±3.32 with minimum and maximum score of 0 and 19. The study findings give us a better considerate that Traumatic disorders (39.4 %), hormone issues (45.2%), were the main causes of anxiety. 39.8% indicated that they had a family history of anxiety. Overall, moderate to high levels of anxiety among the participants were observed. Conclusion: These results illustrate the need to devise treatment strategies to alleviate symptoms of generalized anxiety and reduce the prevalence of Generalized Anxiety Disorder among students. It is suggested that to decrease the level of anxiety among university students, regular counseling sessions should be implemented.

Analytical and Optimization Based Modeling Techniques to Assess the Performance of Submicron Sic Mesfets

In therst part of the thesis, a detailed analytical mathematical model describing I ? V characteristic of a submicron SiC MESFET has been presented. Poisson''s equation with appropriate boundary conditions is solved to determine potential distribution inside the channel. The location of Schottky barrier gate with corresponding depletion layer width where the carrier''s velocity gets saturated is evaluated. It has been demonstrated that the depletion modi cation underneath the Schottky barrier gate causesnite output conductance in the saturation region of operation. I ? V characteristics of submicron SiC MESFET have been modeled and compared with conventional velocity saturation techniques, where the depletion layer after the onset of current saturation has been treated as constant. It is noted that the proposed depletion layer modi cation technique, when incorporated in the device modeling, gave15.9% improvement in the modeled out characteristics of a submicron SiC MESFET. In the second part, an improved empirical model has been presented to simulate DC and pulsed I ? V characteristics of SiC MESFETs. A comparative analysis has been carried out by employing swarm optimization technique and it has been established that the proposed model, dependent upon the device characteristics, is7-24% better than its counterparts. Based on simulated characteristics, numerous parameters de ning the device geometrical structure have been estimated to a good degree of accuracy. It has been shown that the developed technique is versatile enough and can be a useful tool for device simulation softwares. In the third part, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modi ed due to intense transverse electriceld and/or self-heating e ects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for x devices meant for high power applications. A set of expressions for AC small signal elements have been developed using Ids and their dependence on device biasing have been discussed. The validity of the proposed technique has been demonstrated using experimental data.