تأثر الأدب العربي من تعليمات النبي ﷺ دراسة و تحقيقا

It is estimated by studying the history that the imagination of life was limited before the appearance of Islam. A new era started after the arrival of Islam. Revolution came in thoughts and ideas. Every department was effected even poetry, literature and language pleasantly effected. A revolution created in the Arabic literature after the revelation of the Holy Quran even it taught the rituals of representation of emotions along with facial and spiritual beauty to the Arabic literature. Arabic language is full of knowledge and thoughts of whole world today and the axis of Arabic language and literature is the Holy Quran. The resources of ignorant literature which we get today was collected to save and understand the language of the Holy Quran. For example to eliminate the linguistic flaws, grammar science came into being and rhetoric science came into being to prove Quranic miracle and language and literature came into being to explain the poor words, and Hadith, tafseer, fiqah and other sciences came into being for religious laws. The Holy Quran changed the direction of literature towards justice, service to humanity and support of right and truth and chastity and modesty and God-worship. It gave appropriate dignified styles to explain every topic and invited to work by using reasons and thoughts. Arabic language is effected by the Holy Quran in such a way that it softened the hard and ruthless hearts of Arabs and made the surface wisdom heavy and solid by entering in it.  Could not get effected by Holy Quran as the level which prose got benefit. The prose got more shine in the time of Khulafa-e-rashidin when victories increased, boundaries of Islamic state expanded and political and developmental issues increased. It is a fact that Arabic prose got too high as compared to the Arabic poetry due to the Holy Quran.  

Thin Films Solar Cells Based on Semiconducting Bismuth Sulphide and Quantum Dots Heterojunction

The present research work was aimed to investigate the potential of bismuth sulfide and lead sulphide quantum dots thin films to be employed as n-type and p-type nanomaterials for efficient solar harvesting. Binary and ternary n-type bismuth sulphide and p-type lead sulphide thin films at different dopant concentration levels were deposited by the chemical bath deposition (CBD) and Successive Ionic layer Adsorption Reaction (SILAR) methods, respectively. Nitrate salts were used as cationic precursor, while thioacetamide and sodium sulphide were used as S2- source for deposition of bismuth sulphide and lead sulphide thin films, respectively. The aim of the study was also to improve the optoelectronic properties and reduce the toxicity level of constituent materials particularly, lead sulphide by means of doping. Few earth abundant and environment friendly, bi and tri-valent cations like; Cu2+, Ni2+, Co2+ and Al3+ were used as dopants. Five doped series of Bi2S3 and two series of PbS quantum dots thin films having different dopant content were deposited on microscopic glass slides. CBD and SILAR were found as the suitable and cost effective methods even extendable for the deposition of derivatives of both Bi2S3 and PbS thin films, respectively. Phase composition, optical, electrical, morphological and electronic transport properties were investigated by X-Ray Diffraction, UV-Vis. Spectroscopy, Photoluminescence, Hall Effect Studies, Scanning Electron Microscopy and Atomic Force Microscopy. The film thickness was measured by ellipsometry and was found to be dependent on the composition of bath solutions. Optical parameters i.e. absorption-coefficient, dielectric constants, dispersion and Eurbach energy were investigated. Electronic as well as transport properties including conductivity, type of charge carrier, sheet carrier concentrations and mobility of charges were also studied. The obtained data revealed that all deposited Bi2S3 and PbS quantum dots thin films have direct allowed band gaps energies (Eg). For Bi2S3 thin films, Eg value was 1.6eV which upon dopant addition reduced down to 1.1eV, while in case of PbS quantum dots thin films, Eg was as high up to 2.1eV which was successfully reduced down to 1.8eV. Doping also played a role to enhance the absorption capacity of the materials, especially for Bi2S3 derivatives. In case of Bi2S3 thin films and its derivatives, values of refractive index (n) were found in the range of 2.9 to 1.3 and for extinction co-efficient (k) values were 1.03 to 0.3. While, in case of PbS quantum dots thin films, respective values were in the range of 1.6 to 1.5 and 0.1 to 0.002, respectively. Photoluminescence spectra exhibited by all doped derivatives were also modified with reduced luminescence intensity. Ellipsometry studies revealed the decrease in film thickness for all samples but only in case of Al3+ doped Bi2S3, the thickness increased from 269.99 to 506.04 nm. Structural analysis showed that Bi2S3 conserved its orthorhombic crystal lattice for Ni2+ and Co2+ doped series. While for Cu2+ doped series, emergence of new crystalline phase occurred and for Al+3 doped series, a transition from crystalline to amorphous phase was observed.In case of quantum dots, few other peaks were observed along with PbS cubic phase. Topographical analysis validated the use of most of the synthesized materials in photovoltaic devices due to homogeneous and compact film deposition. Optoelectronic properties suggested that doping is an effective tool to enhance the charge carrier concentration for both the studied materials. All the synthesized binary and ternary materials were studied for fabrication of new heterojunctions in photovoltaic devices. Results showed that efficiency was enhanced from 0.36% to 0.54%, owing to the modification in the characteristic properties of individual n and p layers.