مارنہیں پیار
زندگی میں انسان کو کئی حوالوں سے زندگی کا احساس دِلانا ہوتا ہے اور ثابت کرتا ہے کہ وہ شاہراہ حیات پر رواں دواں ہے خواہ وہ راستے خار دار جھاڑیوں سے پر ہو یا اس پر از ہارواثمار سے لدے درخت کی ٹہنیاں سر جھکائے محوِ حمدوثناء ہوں۔ زندگی مسائل سے بھری ہوئی ہو یا اس کی رنگینیاں ، رعنائیاں اظہر من الشمس ہوں۔ انسان کو کسی نہ کسی صورت میں ان سے واسطہ رہتا ہے۔ انسان کبھی خوش وخرم ہوتا ہے اورکبھی ناراضگی کے باعث اس کی پیشانی پرشکن واضح ہوتی ہے۔
زندگی میں انسان سے کوئی اچھاعمل سرزد ہوتا ہے تو اسے انعام و کرام سے نوازا جا تا ہے اور اگر اس سے کوئی خطا سرزد ہوتی ہے تو اس کو اس کی سزا بھگتنا پڑتی ہے، اچھے کام کی انجام دہی پراچھے صلے کا سزاوار ٹھہرتا ہے اور سہواً یا عمداً کوئی غلطی ہو جائے تو وہ سزا کا مستحق ٹھہرتاہے۔ دین اسلام میں بھی جزاء وسزاء کا تصور موجود ہے، عابد اور صالح مسلمان کے لیے وعدہ ٔحورو قصورموجود ہے۔ خاطی اور گنہگار کے لیے وعید جہنم کا تصور موجود ہے۔ اگر یہ تصور ختم ہو جائے تو حصول راحت کے لیے کی جانے والی مساعی جمیلہ کی چمک ماند پڑ جائے گی اور سزا کی طرف مائل ہونے والی حرکتیں اور اعمال سیٔہ کی کثرت ہو جائے گی’ ’مار‘‘ کا تصور موجود ہے اور ’’ پیار ‘‘ کا تصور بدرجہ اتم موجود ہے۔
یہ ہماری عظمت ہوگی ’’مارنہیں پیار‘‘ کو اپنے معاملات میں جب داخل کریں گے، اور محبت و شفقت کا وتیرہ اپنائیں گے تو اس خصلت حمیدہ کی آفاقیت سے کسی طور بھی صرف نظر نہیں کر سکتے۔ یہ اسلوب ایک طالب علم کے لیے فرحت بخش ثابت ہوگا۔ اگر چہ مار کے تصور سے تاریخ...
Seerah is a separate Islamic science from Hadith as their primary sources are different. Although there are some extents where there is over laying between them, but traditionally Seerah has different principles as compared to Hadith. The Scholars of Hadith were very strict in applying their rules whereas the scholars of Seerah were more flexible. The reason is, when academics were dealing with Ahadiths and deducingdivine rulings, they wanted to make sure they were founding the rulings on Ahadiths that were authentic and sound. So that is why they applied very stringent rules to accept Ahadith. However, when it came to Seerah, they were more flexible in their rules, because they study this as history of The Prophet PBUH which does not touch the Sharia rulings. So, we find that writers of Seerah would accept narrations, they would not usually accept if they were dealing with Ahadith. This practice with Seerah narrations was followed by our early scholars. But recently, there is a new movement among some of our researchers that they wanted to apply the rules of Ahadith on Seerah. We do not agree this approach and in this article, we have had a humble effort to compile a set of rules for acceptance of Seerah narrations.
This research focuses on the designing and simulation of normally-on and normally- off 4H-SiC VJFET. In the present study, concepts of controlling and improving the device characteristics have been discussed by employing geometrical parameters, such as drift layer thickness and channel width along with doping concentration. A two dimensional numerical device simulator, Sentaurus TCAD, is used to design, model and optimize the structures of SiC VJFET. The extraction of parameters through finite element simulation is also a prime focus of this research. Based on the review of SiC JFET, different structures are designed to address some important parameters that are not readily accessible when using experimental methods. The relationship between electric field, electron mobility and electron velocity is also discussed through finite element simulation. The effect of channel concentration on breakdown and forward characteristics is discussed and devices are shown to behave normally-off in the selected range of channel concentrations from 1 x 1015 cm-3 to 9 x 1015 cm-3. Herein, we theoretically report the presence of bipolar mode at high gate voltage in 4H-SiC VJFET for the first time. To the best of our knowledge, these observations are not yet discussed experimentally. The theoretical evidence showing the presence of bipolar mode at high gate voltage hence reduces the current gain and specific on-resistance which ultimately effects the device performance. These investigations will definetly help improve the functionality of experimentally desigened devices afterwards. Temperature-dependent high voltage breakdown characteristics of normally-off 4H-SiC VJFET are also simulated, utilizing the wider drift layer thickness of 120 μm. In order to investigate the temperature-dependent electric field and impact ionization distribution, finite element simulation is performed. The distribution of electric field revealed the punch-through behavior which provides high breakdown voltage capability at narrow channel opening in case of zero gate bias or wider channel opening under limited negative gate bias. Furthermore, the device exhibits a negative temperature coefficient for breakdown voltage. Breakdown voltages are obtained with the dependence of channel widths demonstrating that negative gate voltage is required to obtain the maximum breakdown voltage. Furthermore, the effects of drift layer thickness with the dependence of drift doping on the breakdown voltage and specific on-resistance are discussed. Detailed analyses of design parameters are performed with the set of parameters used in the process calibration. The obtained results are compared with the experimental and theoretical reported data, demonstrating that the proposed structures show a good validation between simulation and experiments.