السلام اساس الاسلام

This article deals with a very important and basic feature of Islām on whose foundation the whole façade of Islām is erected, i. E., Peace. If we study the Quranic injunctions, the sayings of the Holy Prophet Muḥammad (r) and his kind actions i. E. His Sunnah, it becomes quite obvious that our topic of research is the top most concern of al-Sharī’ah, because peace is the foremost attribute of Islām. Islām means to prevail peace not only in the lives of the people in this world, but in the hereafter, too. In this research paper, the author has done his level best to prove that peace and solidarity play an important role in all the spheres and walks of life. Islām emphasizes it the most. Islamic teachings regarding peace include an individual’s life affairs, as well as the national and the international relations. We notice that all actions taken by the holy Prophet (r) meant to spread peace among the Muslims and the non-Muslims. The Holy Prophet (r) was explicitly declared as ‘Raḥmah li’l-‘Ālamīn’ (A mercy for all the worlds) by Almighty Allāh. We need to highlight and follow his sublime example to let the Muslims and the rest of the world know what Islām actually stands for; in a single word, it is just PEACE!

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.