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The profitability of technical trading rules:evidence from emerging market of Pakistan

Thesis Info

Author

Saba Arshad

Supervisor

Sumayya Chughtai

Department

Department of Business Administration (Finance)

Program

MS

Institute

International Islamic University

Institute Type

Public

City

Islamabad

Province

Islamabad

Country

Pakistan

Thesis Completing Year

2015

Thesis Completion Status

Completed

Page

71

Subject

Business Administration

Language

English

Other

MS 332.6452 SAP

Added

2021-02-17 19:49:13

Modified

2023-01-06 19:20:37

ARI ID

1676722315559

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یومِ دفاع پاکستان

یوم دفاعِ پاکستان
نحمدہ ونصلی علی رسولہ الکریم امّا بعد فاعوذ بااللہ من الشیطن الرجیم
بسم اللہ الرحمن الرحیم
صدرِذی وقار اور میرے ہم مکتب شاہینو!
آج مجھے جس عنوان پر اظہار خیال کرناہے وہ ہے:’’یوم دفاع پاکستان ‘‘
جنابِ صدر!
اقوام کی زندگی میں ایسے دن بھی آئے کہ انہیں اپنی بقاء کے لیے تن من دھن کی بازی لگانا پڑی۔ انہیں اپنی مسرتوں کو خیر آباد کہنا پڑا، انہیں اپنی آبادیوں اور بستیوں کو چھوڑنا پڑا، انہیں طوفانوں کا مقابلہ کرنا پڑا۔
صدرِذی وقار!
کسی چیز کا حصول جتنا مشکل ہے، اس سے بڑھ کر اس کی حفاظت مشکل ہے، اس کا تحفظ ضروری ہے، اس کے لیے وقت کی قربانی ہے، اس کے لیے مال و اسباب کی قربانی ہے، عزیز واقارب چھوڑنے پڑتے ہیں، اس کے لیے اعزاء واقربا کی جدائی برداشت کرنی پڑتی ہے۔
جنابِ صدر!
’’یوم دفاع پاکستان ‘‘کسی الٰہ دین کے چراغ کانام نہیں ہے ،کسی تفریحی مقام کا نام نہیں ہے۔ کسی بادِ نسیم کے جھونکوں کا نام نہیں ہے ،کسی نورافشاں کہکشاں کا نام نہیں ہے،کسی آفتابِ جہاں تاب کی کرنوں کا نام نہیں ہے۔
صدرِذی وقار!
یہ ایک ایسی قوم کی جہداورمساعی کا نام ہے جس نے شب خون مارنے والی قوم کو ناکوں چنے چبوائے ، جس نے دشمن کی رات کی نیندیں حرام کر دیں، جس نے دشمن قوم کے گھٹیا عزائم کو نیست و نابود کر دیا، جس نے ابرِ رحمت کی موسلا دھار بارش سے آتش اعداء کو سردکر دیا۔
جنابِ صدر!
اس جنگ میں ہر ایک نے حصہ بقدر جُثّہ لیا، نوجوان شمشیر بکف ہوکر میدان میں آ گئے ، بوڑھوںاور بچوں نے کفن پوش ہو کر دشمن کا ڈٹ کر مقابلہ کیا۔ مضمون نگار نے اخبار میں مضامین لکھ کر دشمن کے عزائم کو طشت از...

الامثال النبوية و بلاغتها

The use of similes, metaphors, proverbs and idioms is given its due prestige in the annals of literature. To mention their use in the Islamic literature especially in the sayings of our Holy Prophet (PBUH) renders an ease and comfort in order to elaborate upon the Islamic teachings. It not only enhances interest but renders an inexplicable charm to explicate Islamic teachings so as to make them easy to comprehend. The use of figurative language enhances the rhythmic flow and charm of language and thus brings in a huge impact on literature. It is in this way that the proselytization task be done in an easy effective manner.

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.