تعزیرات پاکستان کی رو سے قتل کی چار اقسام ہیں، جو کہ مندرجہ ذیل ہیں:
Ibne Jareer Al-Tabar┘ is well known personality in the 3rd century as no one second in his period. His opinion was considered authentic due to his knowledge and virtue. He was great scholar, commentator, narrator, jurisprudent and historian. Taftheer Ibne Jareer Al-Tabar┘ is used as basic source for those who follow “Transcribed Method”. He established a separate school of thought due to his over command on Fiqah. This paper describes the “The Exegetical Methodology and the Biography of Ibne Jareer Al-Tabar┘”. The Tafsir gives information about older commentaries which have not survived to the present. Its content —which encompasses dictionaries, historical notes, law, recitation, theology and Arabic literature— has made it a highly referenced book throughout history, resulting in many editions. It is also a good example of reasoning in a Tafsir by a widely accepted scholar, giving it a value of diraya.
As Silicon CMOS manufacturing industry is possibly reaching to its climax with complex requirements posed by the International Technology Roadmap of Semiconductors; a “More Moore” approach is fully utilized to further exploit the Silicon Fabrication protocols. This goes hand in hand with other two process and design strategies, namely, “More than Moore” and “Beyond CMOS”. A 10 node technology, converging the chip fabrication processes between 10nm and 20nm, has been rigorously tested and revisited to look for complimentary solutions which are exploitable in variety of designs and processes in next generation technology nodes. The operational output characteristics of MOS/CMOS and its variant devices are being reassessed with a perspective of energy efficiency gained during the device design (inclusive of scaling requirements) and process development. This, in turn, influences the power consumption, proficiency of performance and reliability of the devices. Such energy efficient electronics has gained a huge interest due the evolution of Internet of Things (IoT) and its ultra-low power considerations. This study focuses on the energy efficient design and fabrication of Silicon CMOS/MOSCAP devices with a detailed electrical and electro-optical metrology. A FAB-specific MOSFET design (technology file), simulated output characteristics, half-of-FAB line processing of MOSCAP structure with integration of novel Atomic Layer Deposited TiN/HfSiOx metal gate/High-k stack and atomistic-layered PVD-driven Aluminium back-contact metallization is realized in this work. Energy efficiency is also studied through the concept of thermal budget by virtue of the dynamics of annealing which greatly influence the electrical properties of the gate stack and consequently the reliability of the process. Subsequent process characterization is performed using Current-Voltage, Capacitance-Voltage, Current Density, Leakage Resistance, Built-in Voltage, Doping Profiling, Charge-storage/ Permittivity, Hall Effect and Vertical Field analysis. Sophisticated metrology techniques such as Charge-Deep Level Transient Spectroscopy and Spectroscopic Ellipsometry are utilized to extract and evaluate the hypersensitive electrical and electro-optical parameters such as charge-transient behavior, activation energy, trap density, capture cross-section, refractive index, dielectric and extinction coefficients etc. Design verification through FAB-line processing, post-FAB thermal processing and variety of measurements revealed a number of interesting results which altogether provide a novel process window to engineer energy efficient electronics with a better trade-off. These results may have ramifications for device and process engineer.