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Home > Effect of Radiation on Varietal Improvement of Regenerated Plants of Lilium and Their Characterization Through Molecular Markers

Effect of Radiation on Varietal Improvement of Regenerated Plants of Lilium and Their Characterization Through Molecular Markers

Thesis Info

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Author

Farah Aslam

Program

PhD

Institute

Lahore College for Women University

City

Lahore

Province

Punjab

Country

Pakistan

Thesis Completing Year

2016

Thesis Completion Status

Completed

Subject

Botany

Language

English

Link

http://prr.hec.gov.pk/jspui/bitstream/123456789/12501/1/Farah%20Aslam_Botany_2016_LCWU_PRR.pdf

Added

2021-02-17 19:49:13

Modified

2024-03-24 20:25:49

ARI ID

1676725991396

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Lilium is one of the six major bulbous genera crops and also one of the leading cut flowers all over the world. It has three important markets: fresh-cut flowers, potted flowering plants and bulbs for domestic gardens and formal landscapes. So keeping in view the importance of this ornamental plant, the present study was conducted to induce mutation (in vivo and in vitro mutagenesis) in different cultivars of Lilium to get the new varieties having better morphological traits including plant height, leaf and flower size, flower shape and flower colour. For this purpose an efficient protocol has been optimized for micropropagation of ten cultivars present in four major groups (Oriental, Oriental x Trumpet, Longiflorum x Oriental and Longiflorum) of Lilium to get the shoots that were further used as plant material for in vitro mutagenesis. MS medium fortified with BAP 0.1 + Kin 0.1 + IAA 3.0 (mg/L) has been found to be best for shoot initiation. Effect of shaking cultures and sucrose concentration was also observed in the present study. It was observed that cultures inoculated in the same medium but in agitation position with 120 (rpm) showed higher regenerated frequency as compared to stationary cultures. Similarly moderate sucrose concentration (60 g/L) proved to be better as compared to 30 and 90 (g/L). Healthy regenerated plantlets were acclimatized in sterile mixture of sand, soil and cocopeat in the ratio of 1:1:1. Mutagenesis was induced in all the groups of Lilium including by treating the bulbs (in vivo mutagenesis) and regenerated shoots (in vitro mutagenesis) through plant tissue culture during the first phase of current study with different doses of gamma rays 2.0-10.0 (Gy). It was noticed that growth of plants in both in vivo and in vitro mutagenesis was affected by gamma rays. Except in Samur La pink cultivar of Lilium, higher doses have inhibitory effect on plant growth, but in Samur La pink of Oriental group of Lilium, stimulatory effect was observed at higher doses of gamma rays. Superior mutants were selected on the basis of change in flower morphology. Larger flowers with smooth petals were obtained at 10.0 (Gy) dose of gamma irradiation. Similarly changes in flower morphology were also noticed in Montezuma-O-red, Advantage La salmon, Golden tycon yellow and Easter lily cultivars of Lilium at different gamma irradiation doses. It is evident from the results of present investigation that mutagenesis combined with plant tissue technique lead to varietal improvement of different cultivars of Lilium. Further study was also carried out to make the molecular characterization of control and mutants of same cultivar to detect the genetic polymorphism and variations. Two different molecular marker systems including Random Amplified Polymorphic DNA (RAPDs) and Simple Sequence Repeats (SSRs) were selected for the purpose. Among the molecular markers, Randomly Amplified Polymorphic DNA (RAPDs) was used as a marker of choice in the present investigation. It was noticed that mutagenesis caused changes at genetic level and separated the control genotypes from the irradiated ones into different groups depending on the genetic variation occurred at different doses. Mostly control and mutants treated at lower doses of gamma rays were combined in one group while genotypes treated at higher doses were separated in another group. Other molecular marker system selected for the present investigations was Simple Sequence Repeats (SSRs) due to high level of polymorphism and reliability. Genetic polymorphism along with the respective allele sizes, PIC (Polymorphic Information Content) values and Hobs (Observed heterozygosity) of the cultivars was also recorded. These markers also separated the control and mutant genotypes on the basis of doses of gamma rays like RAPDs. It is evident from the above results that mutagenesis (in vivo and in vitro) caused genetic variations proved by RAPDs and SSRs which lead to production of new varieties having improved morphological traits.
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شیخ محمد عبداﷲ [وزیر اعلیٰ جموں و کشمیر ]

شیخ محمد عبداﷲ
افسوس ہے کہ گزشتہ ماہ ستمبر کی۸/تاریخ کو شیخ محمد عبداﷲ، وزیر اعلیٰ ریاست جموں وکشمیر کاانتقال۷۷برس کی عمر میں ہوگیا۔ ان کی وفات سے ریاست کی نہایت پیچیدہ سیاسیات میں جو خلا پیداہوگیا ہے اس کا پُرہونا بظاہر ناممکن ہے۔ شیخ صاحب کی شخصیت کتنی قدآور اورکس درجہ بھاری بھر کم تھی اس کااندازہ اس سے کیا جاسکتا ہے کہ۱۹۵۳ء میں جب کہ وہ ریاست جموں وکشمیر کے وزیر اعلیٰ تھے ان کو سینٹرل گورنمنٹ نے اس عہدہ سے برخاست ہی نہیں کیا،بلکہ فوج اورپولیس کی عظیم جمعیت کے زیر سایہ انہیں گرفتار بھی کرلیا۔اس کے بعد مجموعی طورپرکم وبیش اٹھارہ سال شیخ صاحب نے نظربندی اوراسارت میں بسر کیے۔اس سلسلہ میں ان پر سازش کامقدمہ بھی چلایا گیا اورقسم قسم کے الزامات لگائے گئے جوبے بنیاد ثابت ہوئے، لیکن شیخ کی نظر بندی قائم رہی۔شیخ کھلے دماغ اورصاف ذہن کے آدمی تھے، وہ کٹر کشمیری تھے، جوکچھ سوچتے،خالص کشمیر اور اہل کشمیر کے مفاد میں سوچتے اورپھرجو فیصلہ کرلیتے اس پر مضبوطی سے قائم رہتے،کسی قسم کاخوف یاکوئی لالچ اس فیصلہ سے ان کومنحرف نہیں کرسکتا تھا۔ انھوں نے ہندوستان سے الحاق کافیصلہ بھی کسی دباؤ میں نہیں کیاتھا لیکن ساتھ ہی ان کا نظریہ یہ تھا کہ دوسری ریاستوں کے مقابلہ میں کشمیر کے لیے دستوری طورپر چند خصوصی رعایتوں کاحاصل ہونا ضروری ہے نیز یہ کہ کشمیر کامسئلہ برصغیر کی دو حکومتوں کے درمیان جو بس کی گانٹھ بناہواہے اس صورت حال کودوستانہ طریقہ پر ختم ہونا چاہیے کیونکہ جب تک یہ صورت حال قائم رہے گی ریاست جموں وکشمیر کو امن و اطمینان کے ساتھ ترقی کرنے، پھلنے پھولنے کاموقع نہیں ملے گا اور کشمیریوں میں بُعدوافتراق کی دیوار سدِّسکندری بن کر ایسی حائل رہے گی کہ رشتہ داریاں ختم ہوجائیں گی۔
شیخ کی معزولی اوراسارت کے بعد ریاست...

Association of Serum Ferritin with Risk of Anemia in Non-Diabetic Adolescents with Family History of Type 2 Diabetes Mellitus

Background: Controversy occurs in the relationship between serum ferritin levels, insulin resistance and risk of developing anemia in adolescents with family history of diabetes. Aims & Objectives: This study was designed to find out the association between serum ferritin levels with risk of developing anemia in non-diabetic adolescents with family history of type 2 diabetes mellitus (T2DM). Materials & Methods: A descriptive cross-sectional was conducted in a local medical institute of Lahore. Study included 50 non-diabetic, non-obese male / female adolescent with family history of type 2 diabetes mellitus and 50 healthy male/female non-obese adolescents without family history of T2DM considered as controls. Level of serum ferritin and serum insulin was estimated by Enzyme Linked Immunosorbent Assay. Blood glucose was estimated by auto-analyzer. Insulin resistance was calculated by HOMA-IR index and beta cell function was assessed by HOMA- beta index. Results: Levels of fasting blood sugar, insulin resistance were found to be increased with decreased level of serum ferritin and decrease beta cell function in both male as well as female cases as compared to controls. Negative correlation was found between serum ferritin and insulin resistance while a positive correlation was found between serum ferritin and beta cell function. Conclusions: Low level of serum ferritin is associated with reduced beta cell function and increased insulin resistance. This may increase the risk of developing iron deficiency anemia that can affect both immune system as well as increase susceptibility to infections.

Study and Analysis of Space Radiation Effects on Vlsi Microelectronics Devices

This research thesis presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with different orbital parameters to predict the performance of onboard memories and/or random logic devices fabricated in 65 nm technology node. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed VLSI devices. The space radiation environment has been modeled in the form of particles trapped in Van-Allen Earth Radiation Belts (ERBs), Energetic Solar Particles Event (ESPE) and Galactic Cosmic Rays (GCRs) whereas its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). The required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been determined with assumed typical Aluminum shield thickness of 100 mils or 2.54 mm. In order to evaluate space radiation environment and analyze energetic particles effects on six transistors (6T) Static Random Access Memory (SRAM) bit-cell, Outil de Modélisation de l‟Environnement Radiatif Externe (OMERE) toolkit developed by Tests & Radiations (TRAD) company/organization located at Toulouse France was utilized. Therefore, this thesis focuses on the radiation response of 6T SRAM bit-cell circuits operating in radiation environment existing at LEO. The performance of bulk CMOS technology based devices was evaluated by characterizing its susceptibility to Single Event Upsets (SEUs). Further, the impact of technology scaling on SEU rates, Linear Energy Transfer (LET) threshold and area of cross-section per bit/device due to ionizing radiation environment at an altitude up to 1000 km was simulated. Due to irradiation of gate and drain regions of off-state NMOS transistor in SRAM bit cell with LET spectrum of particles transmitted through shielding, the magnitude and pulse duration of generated transient current translated to voltage pulses were analyzed. The sensitive strike locations for 65 nm SRAM bitcell were presented in SEU map whereas Cumulative Distribution Function (CDF) for upset probability regarding SEU occurrence was presented as a function of Vdmin i.e. minimum differential voltage between the internal complementary storage nodes of SRAM represented by Q Q (Q-bar). Finally, the SEU sensitive parameters required to predict SEU rate of on-board target device i.e. 65nm SRAM was calculated with typical Aluminum spot shielding using fully physical mechanism simulation. Moreover, contribution of Multiple Cell Upsets (MCUs) towards total SEU rate for 65nm SRAM bitcell was determined with Multi Scale Single Event Phenomenon Prediction Platform (MUSCA SEP3) toolkit The effect of TID on MOS devices in LEO environment to cause electrostatic potential variations and drain leakage current “Id” was determined with Genius device simulator module of Visual TCAD. Finally, effect of Displacement Damage Dose (DDD) was estimated for 1 MeV electron and 10 MeV protons fluence with the help of OMERE-TRAD toolkit. In order to characterize the robustness of scaled CMOS devices, state of the art simulation tools such as Klayout, GDS2MESH, Visual TCAD/Genius, GSEAT/Visual Particle, runSEU and MUSCA SEP3 were utilized whereas LEO radiation environment assessment as well as single event upset rate prediction was accomplished with the help of OMERE-TRAD software.