مے کدہ
مے کدہ ویراں پڑاہے
جام و سبو آشفتگی اوڑھے مدہوش پڑے ہیں
کوئی آہٹ نہیں،کوئی چاپ نہیں
شمع چپ چاپ پگھل رہی ہے
ساقی چلمن کے پیچھے لفظ ’’ِ کن ‘‘الاپ رہا ہے
رند ’’فیکون ‘‘کہتے ہوئے اس کی طرف لپکتے ہیں
وہ موجود ہے سب کی سنتا ہے
مگر دکھائی کسی کو نہیں دیتا
جو کہتا ہے سنائی کسی کونہیں دیتا
کوئی خمِ بادۂ احمریں اٹھائے...
Prayer [al-Ṣalāh] is the second most important pillar of Islām. This is the ritual which is supposed to be offered by all the Muslims, who come of age and are sane, regardless of their status and wealth. Following the acceptance of Islām, offering Prayer is the foremost obligation of a Muslim, which is considered the prime manifestation and the testimony of his or her practical submission to Allāh and His religion, Islām. Faith in Allāh is the foundation of Islām, in the same way, Prayer is the practical foundation of Islām. Therefore, the Prophet (S. A. W) laid stress on the significance of Prayer, the most. Only those, who are steadfast in their Prayers and safeguard them are really aware of its importance, and only they can expect from Allāh to give them their reward, thus, they are the true believers. The importance and reality of Prayer can be understood only by that person who is well aware of this relation between man and Allāh and only he can feel its true spiritual pleasure. The effects of Prayer are prominently visible in the daily life of Muslims. The history of Prayer is as old as the religion itself. Its concept has been a part of all the religions, however, they have different ways to perform it. In this paper, the author explores the Islamic academic sources to ascertain the importance and the status of Prayer in Islām. Also, he explores its history, the tidings and remuneration of Prayer and of the rites and rituals belonging to it, e. G., Mosque, Āzān, Iqāmat, Rukū‘ (to bow down), Prostration, Maintenance of Ranks, etc.
This research focuses on the designing and simulation of normally-on and normally- off 4H-SiC VJFET. In the present study, concepts of controlling and improving the device characteristics have been discussed by employing geometrical parameters, such as drift layer thickness and channel width along with doping concentration. A two dimensional numerical device simulator, Sentaurus TCAD, is used to design, model and optimize the structures of SiC VJFET. The extraction of parameters through finite element simulation is also a prime focus of this research. Based on the review of SiC JFET, different structures are designed to address some important parameters that are not readily accessible when using experimental methods. The relationship between electric field, electron mobility and electron velocity is also discussed through finite element simulation. The effect of channel concentration on breakdown and forward characteristics is discussed and devices are shown to behave normally-off in the selected range of channel concentrations from 1 x 1015 cm-3 to 9 x 1015 cm-3. Herein, we theoretically report the presence of bipolar mode at high gate voltage in 4H-SiC VJFET for the first time. To the best of our knowledge, these observations are not yet discussed experimentally. The theoretical evidence showing the presence of bipolar mode at high gate voltage hence reduces the current gain and specific on-resistance which ultimately effects the device performance. These investigations will definetly help improve the functionality of experimentally desigened devices afterwards. Temperature-dependent high voltage breakdown characteristics of normally-off 4H-SiC VJFET are also simulated, utilizing the wider drift layer thickness of 120 μm. In order to investigate the temperature-dependent electric field and impact ionization distribution, finite element simulation is performed. The distribution of electric field revealed the punch-through behavior which provides high breakdown voltage capability at narrow channel opening in case of zero gate bias or wider channel opening under limited negative gate bias. Furthermore, the device exhibits a negative temperature coefficient for breakdown voltage. Breakdown voltages are obtained with the dependence of channel widths demonstrating that negative gate voltage is required to obtain the maximum breakdown voltage. Furthermore, the effects of drift layer thickness with the dependence of drift doping on the breakdown voltage and specific on-resistance are discussed. Detailed analyses of design parameters are performed with the set of parameters used in the process calibration. The obtained results are compared with the experimental and theoretical reported data, demonstrating that the proposed structures show a good validation between simulation and experiments.