موضوع9: میرا جی
میراجی، جن کا اصل نام محمد ثناء اللہ تھا۔ منشی محمد مہتاب الدین کے ہاں 25 مئی، 1912ء کو لاہور میں پیدا ہوئے۔ پہلے ’’ساحری‘‘ تخلص کرتے تھے۔ لیکن ایک بنگالی لڑکی ’’میرا سین‘‘ کے یک طرفہ عشق میں گرفتار ہو کر ’’میراجی‘‘ تخلص اختیار کر لیا۔ میراجی کی ذات سے ایسے واقعات وابستہ ہیں کہ ان کی ذات عام آدمی کے لیے ایک افسانہ بن کر رہ گئی ہے۔ اْن کا حلیہ اور ان کی حرکات و سکنات ایسی تھیں کہ یوں معلوم ہوتا تھا انہوں نے سلسلہ ملامتیہ میں بیعت کر لی ہے۔ لمبے لمبے بال ،بڑی بڑی مونچھیں، گلے میں مالا، شیروانی پھٹی ہوئی، اوپر نیچے بیک وقت تین پتلونیں، اوپر کی جب میلی ہو گئی تو نیچے کی اوپر اور اوپر کی نیچے بدل جاتی۔ شیروانی کی دونوں جیبوں میں بہت کچھ ہوتا۔ کاغذوں اور بیاضوں کا پلندہ بغل میں دابے بڑی سڑک پر پھرتا تھااور چلتے ہوئے ہمیشہ ناک کی سیدھ میں دیکھتا تھا۔ وہ اپنے گھر اپنے محلے اور اپنی سوسائٹی کے ماحول کو دیکھ دیکھ کر کڑتا تھا اس نے عہد کر رکھا تھا کہ وہ اپنے لیے شعر کہے گا۔ صرف 38 سال کی عمر میں 3 نومبر، 1949ء کو انتقال کرگئے۔ اس مختصر سی عمر میں میراجی کی تصانیف میں ’’مشرق و مغرب کے نغمے‘‘ ’’اس نظم میں ‘‘’’نگار خانہ‘‘’’خیمے کے آس پاس‘‘ شامل ہیں۔ جبکہ میراجی کی نظمیں، گیت ہی گیت، پابند نظمیں اور تین رنگ بھی شاعری کے مجموعے ہیں۔
میرا جی کا ادبی سرمایہ
شعری تصانیف:
• میرا جی کے گیت:1943 • میرا جی کی نظمیں:1944
• گیت ہی گیت:1944 • پابند نظمیں:1968
• تین رنگ:1968
تراجم:
• مشرق و مغرب کے نغمے
• خیمے کے آس پاس (رباعیات عمر خیام)
• بھرتری ہری کے چند شتکوں کے تراجم
• نگار خانہ(داموورگپت...
Islamic rules and moral values are unique in all aspects. The members of Muslim Ummah have always tried to promote them. At the national level, this duty was carried out by people at different levels whether they were teachers, businessmen or lay man of the society. At international level, some rulers, business professionals and religious leaders played their role. Man's first relationship is with family. This relationship is the cornerstone in the development of a personality.
There has been a lot of change taken place in the family system. In the past, due to the limited necessities of life the financial responsibility was limited to a few people. Media was not that advanced and bold and family members were loving and respectful. With the beginning of advance era, human needs were widened and to satisfy them, women started participating in economic activities along with men. Due to which the child was shifted from his home to day care centre, while the media gave birth to the social media, the stories of compassion and care in home became the past. In the present era, there is a dire need to remove these barriers that hinder the development of Islamic values through balance between income and expenditure, positive and moderate use of media and positive attitude in family.
These issues will be discussed under the answers to the following questions.
What is the role of family in the development of Islamic ethics?
What are the problems faced by the family in the development of Islamic moral values?
What are the solutions to the present-day problems?
This dissertation reports the fabrication and characterization of CeO2 based nonvolatile memory devices as metal/insulator/metal structures. The RRAM devices have been deposited under various deposition conditions using different electrodes, with different stack morphology and various thicknesses of active CeO2 layers. In the case of Zr/CeOx/Pt devices a forming-free bipolar resistive switching has been observed. HRTEM and EDX studies have indicated the formation of a ZrOy layer at the Zr/CeOx interface. The observed resistive switching has been suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies. The presence of oxygen vacancies has been noticed through XRD and confirmed by EDX in the nano-polycrystalline CeOx film and in the nonstoichiometric ZrOy interfacial layer. Similar results have been observed for the resistive switching characteristics of Pt/CeOx/TiN devices as confirmed by XPS, but in this case, the observed resistive switching behavior can be attributed to an interfacial layer TiON, as determined by HRTEM image. That is why this device exhibits low operation current (100 μA), high ON/OFF resistance ratio (>105) and good retention both at room temperature and at 85 °C. More interestingly, the TaN/CeOx/Pt based devices exhibited bipolar resistive switching even without any requirement of electroforming step. For these devices, TaON interlayer, as verified by HRTEM and XRD, has been suggested to play the main role in the resistive switching mechanism which stems from connection and disconnection of filamentary paths made of oxygen vacancies. On inserting an ultrathin metallic layer in Ti/CeO2/Al/CeO2/Pt stack, the resultant device has demonstrated dual resistive switching behaviour. These devices could switch between the two operating modes merely by choosing the polarity of RESET voltage. In addition, the requirement of identical current compliance during the SET process of both xxvii modes provides an additional advantage of simplicity in device operation. On the basis of analyses of current–voltage characteristics and temperature dependence of resistance, resistive switching mechanism has been proposed to be originated from a combined effect of field induced diffusion of oxygen and Al ions in the sandwiched ceria matrix. Without metallic insertion, bilayer Ti/CeO2-x:CeO2/ITO memory stacks have demonstrated stable bipolar resistive switching behavior with low-voltage operation and good endurance. In addition, the narrow cycle-to-cycle and device-to-device distributions of resistance switching parameters have been proposed to originate from the electric field induced drift of defects preferably along grain boundaries in the bilayer structure of ceria. On using both electrodes of conducting oxide (instead of metals), fully transparent (with >80% optical transmission) RRAM devices in ITO/CeO2/ITO format (with weak polycrystalline CeO2 phase) have been found to exhibit reliable bipolar switching behavior. The dual role of ITO polycrystalline films as defects reservoir as well as source of O2- ions in these devices becomes the cause of good data retention (over 104 s) and reliable performance both at room temperature and 85 oC. In almost all the devices studied in this PhD work, Ohmic and Poole Frenkel conduction mechanisms are found to be responsible for charge transport in the low- and high-resistance states respectively. The observed RS characteristics and performance of various CeO2-based devices have shown their potential as candidates for future non-volatile memory applications.