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Ultrasonic-Assisted Versus Conventional Exhaust Dyeing of Bamboo Knitted Fabric with Reactive Dyes

Thesis Info

Author

Safdar Ali Larik

Supervisor

Awais Khatri

Department

Textile Engineering

Program

Mphil

Institute

Mehran University of Engineering and Technology

Institute Type

Private

City

Jamshoro

Province

Sindh

Country

Pakistan

Thesis Completion Status

Completed

Subject

Textile Engineering

Language

English

Added

2021-02-17 19:49:13

Modified

2023-02-19 12:33:56

ARI ID

1676729229684

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قاضی محمد عدیل عباسی

ایک حادثہ المناک]مولانا ظفر احمد خاں[
۱۳؍دسمبر ۱۹۷۹ء جمعرات کی شب میں ایک بجے مولانا محمد ظفر احمد خاں صاحب رحلت فرماگئے۔ اناﷲ واناالیہ راجعون۔ ۱۹۳۸ء میں یہ ادارہ قائم ہوا۔ مولانا مرحوم ۱۹۳۹ء میں ندوۃ المصنفین میں بحیثیت کارکن ومنیجر تشریف لائے۔ موصوف کارسالہ برہان اورادارہ ندوۃ المصنفین سے دیرینہ تعلق تھا۔مرحوم کا حضرت مفتی صاحب سے تعلق چالیس ۴۰ سال رہا۔ اوراسی دوران جب سے دفتر کی ذمہ داریاں میرے سپرد کی گئی تھیں وہ ۱۹۶۸ء تھا، زیادہ تراسی وقت سے میرا مرحوم سے قُرب رہا۔موصوف پُرخلوص نیک دل انسان تھے اور وفاداری ان کے مزاج میں بے پناہ پائی جاتی تھی۔موصوف اپنی خود ایک مثال تھے۔ادارہ ندوۃ المصنفین کے وفادار اورایک اعلیٰ معیار کے کارکنوں میں ان کاشمار تھا۔مولوی صاحب میرے لیے سہارا اور ڈھارس تھے کیونکہ مجھ کو اُن سے حوصلہ افزائی اور تقویت حاصل تھی۔ مولوی صاحب کی جدائی میرے واسطے ایک بھیانک انقلاب ہے۔مجھ کویہ دلی صدمہ پہنچا ہے دعافرمائیں کہ مزید ذمہ داریاں سنبھالنے کی اﷲ تعالیٰ مجھ کو بہترین صلاحیتوں سے نوازدیں۔آمین ثم آمین۔
مولوی صاحب اس جہانِ فانی سے رخصت ہونے کے چھ گھنٹے قبل تک رسالہ برہان کاکام انجام دیتے رہے۔ [منیجر ندوۃ المصنفین دہلی، جنوری ۱۹۸۰ء]

اسلامی مملکت کے بین الاقوامی تعلقات عصرحاضر کے تناظر میں

Islam where considers the superiority of law, provision of justice and equity, building and purification of civilization and emphasis on the welfare of society, there ensures the first priority to humanity, peace and prosperity in the external relations. Islamic state keeps relations on the basis of equality with the world and non-Muslim citizens living within the state. On this belief and ideology Islam invites the world to set together. Islam on these principles of Islamic ideology and belief sets the foundation of collectiveness. On this principle the whole philosophy of life and living system are embraced, and the same Islamic law is the foundation of nations, on this behalf the Islamic state organized the relation with other states. In this way Islamic state on these principles keep relations with other states and within the state relations between Muslim and non-Muslim citizens on the basis of brotherhoods, equality, mercy and the principles of dignity of human being. Along with peace Islam set the principles of war which comprise ethical and prison limitations, duties and ethics amongst warrior, difference between the rights of fighters and non-fighters, treatment with pact holders and prisoners, and specified the way of better treatment with the defeated nations. He thought the manners of war to bloody man who consider everything right during the war. Islam lays great stress on equality, social justice, brotherhood and peace not only in state but across the boarders too. In this article a deep study is done to explain the relations of an Islamic state with other states. Islamic foreign policy emphasizes on the principles of equality among all the human beings and all the races and nations. Islam builds international relation on humanitarian basis.

Fabrication & Characterization of Titania-Germanium Tio2-Ge Based Nanocomposites.

Composite nano-films of TiO2-Ge were grown by ‘pulsed laser deposition’ (PLD) technique on Si wafers while deposition conditions were changed. Firstly single run deposition for a longer time (30 min) with varying Ge concentration in N and p-type polished Si wafers. Secondly films were deposited as single, bi- and tri-layers on n-type polished and unpolished Si wafers such that each layer was deposited for 5 mins. In the first batch of samples target-substrate distance was varied to find its effect on optoelectronic properties of film. It was observed that Ge concentration decreased as target-substrate separation was increased. Also substrate type and separation between target and substrate effected the crystallinity, optical & electrical response of film. On p-type (111) Si wafer thin films showed dominant amorphous behaviour with decreasing Ge concentration. Thin films deposited on Si wafer showed an improvement in crystallinity as target-substrate distance was increased resulting in decrease in crystallite size, increase in defects and strains. Raman spectroscopic results and EDX analysis confirmed the Ge presence in all the samples. Ge identification in Raman and its non-identification through XRD may possibly be due to non-crystalline nature of Ge. Composite nature was identified by the Ge peak related to cubic structure rather than tetragonal (i.e. did not follow crystalline structure of TiO2) i.e. no doping occurred. Films grown at a distance of 6 cm from the target showed better optoelectronic properties which exhibited minimum reflectance but maximum direct and indirect absorption transitions it is also confirmed by its photoluminescence (PL) response. It has a constant refractive index with a stable extinction coefficient. This film demonstrated a positive dielectric constant and a negligible dielectric loss confirming its stable optoelectronic behaviour which was confirmed by its I-V response. Better optoelectronic response for the above mentioned film can be positively due to strains and size reduction of crystallite size. In the second batch of experiment single, di- and tri-layered composite films were grown on polished and n-type unpolished Si (100) wafer. Amorphous nature was observed dominantly in all the samples. Di-layered film deposited on polished n-type Si wafer showed a better optical response which is due to minimum variation in its n. Maximum direct and indirect transitions are also observed in it and a broad PL peak is observed around 2-3.5 eV. Although it does not show better electrical properties as compared to tri-layered thin films but overall optoelectronic response of this film is better as compared to other samples. The reason may be the outcome of crystalline nature of film. Thin films (for 5 min) shows reduced crystallinity and hence optoelectronic response in comparison to that for 30 min, this variance can be attributed to the reduced thickness of film. Single layer film has variable n responsible for lower dielectric constant and hence lowest electrical response.