تقریظ سوئم
بسم اللہ الرحمن الرحیم
نحمدہ ونصلی علی رسولہِ الکریم
مُوصوف ایک علمی گھرانے سے تعلق رکھتے ہیں۔ دینی علوم کے حوالے سے ان کے بزرگوں کی خدمات اظہر من الشمس ہیں ۔اِن کی کتاب ــ ’’ نگارشاتِ راشد‘‘ ایک علمی خزانہ ہے اِس میں طلباء و طالبات کے لیے متعدد مضامین شامل کی گئی ہیں۔ جو اپنی نظیرآپ ہیں حافظ محمد اکرم راشدؔ نے دیگر کتب اور مضامین سے خوشہ چینی کی بجائے فی البدیہہ مواد پیش کرنے کی مساعی جمیلہ کی ہے ۔ اِ ن کی تحریر میں چاشنی اور ندرت ہے۔ اِن کے مضامین جو’’ نگارشاتِ راشد ‘‘کے نام سے زیورِ طباعت سے مرصعّ ومزیّن ہو رہے ہیں عام قاری کے لیے بالعموم اور طلباء و طالبات کے لیے بالخصوص ممدو معاون ثابت ہوں گے۔ ادارہ کے مقابلہ جات ہوں یا ضلعی اور ڈویژن لیول کے مقابلہ جات ’’ نگارشاتِ راشد‘‘ میں شامل شدہ مضامین کفایت کریں گے ۔ یہ طلباء کے لیے نعمت مترقبہ سے کم نہ ہے ۔ موصوف کا ادبی دنیا میں ایک نام ہے اِ ن کو دیکھ کر متقدمین ادباء کی یاد تازہ ہو جاتی ہے ۔ دورانِ ملازمت بھی ادبی پروگرام کے حوالے سے محکمہ تعلیم میں اِن کی تحریریں محو گردش رہی ہیں ۔ اور انعام و اکرام کی حقدار گردانی گئی ہیں۔
اللہ تعالیٰ اِن کو مزید ایسے شاہ پارے پیش کرنے کی توفیق عطا فرمائے ۔
رانا محمد اظہر خاں
چیف ایگزیکٹو آفیسر (ایجوکیشن)
ڈسٹرکٹ ایجوکیشن اتھار ٹی ، رحیم یار خاں
Islam has been a subject of great importance for Muslim and Non-Muslim Scholars. Countless numbers of researchers have written on the Quran, Hadith, Fiqh and Islamic History. Among these scholars Dr. Mahmood Ahmad Ghazi (1950-2010) is renowned for his contribution to Islamic social sciences. He was equally well versed in the classical, as well as, modern scholarly trends in the study of Islam. He worked in various academic, administrative and judicial positions during his life including as professor, Director Da’wah Academy, Director Shariah Academy, Vice President Academics and then President of International Islamic University, Islamabad and was finally elevated in 2010 as a judge at Federal Shariah Court of Pakistan where he served till the end of his life. He was a prolific writer and authored nearly thirty works of high academic value in different Islamic social sciences including Economics, law and Islamic education in Arabic, English and Urdu languages. He attended a large number of conferences across the globe to present his research papers.
As Silicon CMOS manufacturing industry is possibly reaching to its climax with complex requirements posed by the International Technology Roadmap of Semiconductors; a “More Moore” approach is fully utilized to further exploit the Silicon Fabrication protocols. This goes hand in hand with other two process and design strategies, namely, “More than Moore” and “Beyond CMOS”. A 10 node technology, converging the chip fabrication processes between 10nm and 20nm, has been rigorously tested and revisited to look for complimentary solutions which are exploitable in variety of designs and processes in next generation technology nodes. The operational output characteristics of MOS/CMOS and its variant devices are being reassessed with a perspective of energy efficiency gained during the device design (inclusive of scaling requirements) and process development. This, in turn, influences the power consumption, proficiency of performance and reliability of the devices. Such energy efficient electronics has gained a huge interest due the evolution of Internet of Things (IoT) and its ultra-low power considerations. This study focuses on the energy efficient design and fabrication of Silicon CMOS/MOSCAP devices with a detailed electrical and electro-optical metrology. A FAB-specific MOSFET design (technology file), simulated output characteristics, half-of-FAB line processing of MOSCAP structure with integration of novel Atomic Layer Deposited TiN/HfSiOx metal gate/High-k stack and atomistic-layered PVD-driven Aluminium back-contact metallization is realized in this work. Energy efficiency is also studied through the concept of thermal budget by virtue of the dynamics of annealing which greatly influence the electrical properties of the gate stack and consequently the reliability of the process. Subsequent process characterization is performed using Current-Voltage, Capacitance-Voltage, Current Density, Leakage Resistance, Built-in Voltage, Doping Profiling, Charge-storage/ Permittivity, Hall Effect and Vertical Field analysis. Sophisticated metrology techniques such as Charge-Deep Level Transient Spectroscopy and Spectroscopic Ellipsometry are utilized to extract and evaluate the hypersensitive electrical and electro-optical parameters such as charge-transient behavior, activation energy, trap density, capture cross-section, refractive index, dielectric and extinction coefficients etc. Design verification through FAB-line processing, post-FAB thermal processing and variety of measurements revealed a number of interesting results which altogether provide a novel process window to engineer energy efficient electronics with a better trade-off. These results may have ramifications for device and process engineer.