Bâbâ Farîd’s Hymns in Granth Ṣâhib with Qur’ânic Backdrop: A Review

Bābā Farīd al-Dīn Ganj-i-Shakar, considered as the first Punjābī Sūfī poet, not only exercised his skill but also conveyed Qur’ānic and Prophetic (PBUH) message through his Punjābī poetry. His poetry is a rich source of Islamic teachings in lingua franca of the Punjab. The research intends to explore that whether the inclusion of his poetry in the Sikh scripture is recognition of Muslim mysticism or the poetry itself. The study attempts to examine the relation of the hymns of Bābā Ṣāhib with the teachings of Holy Qur’ān. Bābā Farīd, because of his high stature as an originator of Punjābī poetry, got a place in Granth Ṣāhib. The goal of this research is to highlight the pivotal position of Bābā Ṣāhib in connecting the two major religions of the world. The paper not only substantiates the historic position of Bābā Ṣāhib but also gives an insight to the services rendered by his poetry in promoting the interfaith harmony in the Sub-continent. This article focuses on Bābā Farīd as a literary and moral Canon, which led his work to be included in Sikh scripture. Moreover, it hints at the nuances of religious tolerance, mutual respect and love for knowledge, which lacks otherwise in a multi-religious society. In this article some of Bābā Ṣāhib’s verses in Granth Ṣāhib will be traced and analysed, taking into account their Qur’ānic interpretations. The comparative and somewhat historical approaches have been adopted to lay out a vivid analysis of his hymns in relation with the verses of the Holy Qur’ān and hence a message is extracted. Thus, he, evidently becoming part of one of the greatest anthologies of Punjābī poetry, attracted a huge outreach. The research question of this article is, whether the Holy Qur’ān is a basic source of Bābā Ṣāhib’s poetry or otherwise. It is strongly recommended that in order to attain actual harmony in our society, Bābā Ṣāhib’s work should be published in Shah-Mukhi script for the contemporary readership.

Electronic and Optoelectronic Studies of Organic Semiconductors

Organic semiconductors have made inroad into many area of devices which was formally dominated by inorganic semiconductors because of their wide variety of electronic and optoelectronic properties. They being low cost, light weight and low temperature processing materials provide opportunities to fabricate the variety of devices, such as, solar cells, field effect transistors, lasers, light emitting diodes, sensors, photo detectors, smart windows, large area displays, e-paper, etc. The material manipulation, low cost fabrication techniques and the emerging ideas are bringing about much improved performances in the organic electronic devices. Most of the earlier studies have been reported on the p-type organic semiconductors and little is known about n-types. In the development of future organic electronic industry, all organic complementary circuits are not possible without the availability of both p- and n-type organic semiconductors and data is required on the junction properties and mobility studies of these materials. Plenty of data is available on the junction diodes of p-type organic semiconductors but little is known on the n-type organic semiconductors based junction devices and mobility investigations. In this dissertation, the n-type organic semiconducting materials formyl- TIPPCu(II), N,N ́-di-n-heptyl-2,3:6,7-anthracenetetracarboxydiimide (ADCI7) and N,N ́- di-n-octyl 2,3,6,7 anthracenetetracarboxydiimide (ADCI8) have been investigated as active organic materials for their potential application in organic electronic devices. Using organic semiconductor formyl-TIPPCu(II), junction diode, temperature, light and humidity sensors have been fabricated, while ADCI7 and ADCI8 have been used for the fabrication of n-channel organic thin film transistors. To investigate junction properties of formyl-TIPPCu(II) organic semiconductor, fabrication of Ag/formyl-TIPPCu(II)/p-Si heterojunction diode was undertaken and it was made successfully. Its temperature dependent electrical properties are reported. The values of series resistance, ideality factor, zero bias barrier height are observed strongly dependent on temperature. The series resistance and ideality factor decease while the zero bias barrier height increases with the rise in temperature. viiThe surface type Ag/formyl-TIPPCu(II)/Ag humidity sensors has been fabricated to study the effects of changing relative humidity on the electrical parameters and their frequency dependant responses. The values of capacitance and resistance of the sensors were measured at different humidity levels at frequencies of 1 kHz, 10 kHz and 100 kHz. An increase in capacitance and decrease in resistance were observed during the rise of relative humidity from 45 to 95% RH. The hysteresis response of these humidity sensors was also studied at the frequency of 1 kHz. Effects of temperature and light are studied on the capacitance and resistance of the Au/formyl-TIPPCu(II)/Au device. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 187 0 C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased by 13.2 times as compared to dark conditions. ADCI7 and ADCI8 were used to fabricate n-channel organic thin film transistors (OTFTs) on oxidized silicon wafers. To get the high performance of the devices and to avoid the trapping of charge carriers, the dielectric surface were modified by developing the buffer layer of PMMA or by self assembly monolayer (SAM) of HMDS. The OTFTs exhibited high charge mobility of the order of 10 -2 cm 2 V -1 S-1 (ADCI7) and 10 -3 cm 2 V -1 S - 1 (ADCI8) with the on/off ratio of the order of 10 4 showing the appreciable enhancement in the field effect properties of these materials as compared to the previously reported researches for the same family of materials. ADCI7 is introduced as new compound for high mobility n-channel OTFTs.