الاقتتال بین المسلمین: اسبابہ و حکمہ و مفاسدہ

Right from inception, man faces temptations from Satan and therefore finds an evil -edge (a sinning tendency in mankind) . Islam with its vitalizing energy curbs this evil influence successfully. Hereby a review of the killing/murder of Muslims is given with necessary background. The layout ofthis article is asfollow: 1. The literal and idiomatical definition of Murder in view of the sayings of Religious scholars. 2. Five kinds of murder in light of statements of religious scholars. 3 Religious Order for the murder under the commandments of Quran and Sunnah. 4. Faraai and Zaili orders regarding to murder. 5. Sources and reasons of murder. 6. Losses of murder. IAJ'IJT

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.