فیض احمد فیض
فیض احمد فیض(۱۹۱۱ئ۔۱۹۸۴ئ) کا اصل نام فیض احمد خان تھا۔ اور فیضؔتخلص تھا۔ آپ سیالکوٹ میں پیدا ہوئے۔ آپ کے والد خان بہادر سلطان خان ایک کامیاب بیرسٹر تھے۔ فیض نے ابتدائی تعلیم مولوی میر حسن اور مولوی ابراہیم میر سیالکوٹی سے حاصل کی۔۱۹۲۹ء میں فیض نے مرے کالج سیالکوٹ سے ایف ۔اے کا امتحان پاس کیا۔ ۱۹۳۶ء میں آپ نے انجمن ترقی پسند مصنفین کے قیام میں بھر پور حصہ لیا اور پنجاب شاخ کے صدر مقرر ہوئے۔۱۹۴۶ء میں برٹش کونسل نے انھیں ایم بی ای کا خطاب دیا۔ ۱۹۶۲ء میں ان کو دنیا کا اعلیٰ ترین اعزاز لینن ایوارڈ دیا گیا۔ (۵۴۹) فیض نے لاہور ،کراچی اور مختلف شہروں میں قیام کیا۔ لیکن انھیں اپنے آبائی گائوں کالا قادر سے بے حد محبت تھی۔ جب نارووال سے کالا قادر تک پختہ سڑک بنی تو انھوں نے ۱۹۸۰ء میں بیروت سے ’’گائوں کی سڑک‘‘ کے عنوان سے نظم لکھی۔ جب تک وہ زندہ رہے اپنے گائوں میں اپنے عزیز و اقارب سے ملنے آتے رہے۔ اپنی وفات سے تین دن پہلے ۱۷ نومبر ۱۹۸۴ء میں فیض نے اپنی زندگی کا آخری مشاعرہ نارووال (سیالکوٹ) کے شعرا کے درمیان پڑھا۔اسی دن فیض نے نارووال میں ’’فیض اکیڈمی‘‘ کی بنیاد بھی رکھی۔ فیض کے انتقال کے بعد ان کے آبائی گائوں کالا قادر کانام تبدیل کر کے فیض نگر رکھ دیا گیا۔ اس گائوں میں اب ہر سال فیض میلہ بھی منعقد ہوتا ہے۔(۵۵۰)
۱۹۴۱ء میں فیض کا پہلا شعری مجموعہ’’نقش فریادی‘‘ شائع ہوا۔ جس نے اُس زمانے کی ادبی فضا میں ہلچل مچا دی۔ یہ مجموعہ جدید شاعری میں ایک منفرد آواز ہے۔ اس میں فیض کی پہلے دور کی غزلیں اور نظمیں شامل ہیں۔ ان نظموں اور غزلیات میں ایک مسحور کن اور رومانی کیفیت پائی جاتی ہے۔
دوسرا مجموعہ کلام ’’دست صبا‘‘...
Nowadays the entire world, particularly the Islamic countries, are suffering from a state of anxiety and insecurity due to terrorism. The terrorists are destroying peace of the world for the sake of their personal interests. They affiliate their terrorist activities with Islām, while Islām condemns not only terrorism, but also the violation of the country law. Islām is the religion of peace. Allāh, peace of title the with (صلى الله عليه وسلم) Muhammad Prophet His sent Almighty and granted him the name of religion as Islām. The Holy Prophet in harmony and peace of facade the build to life his all spent (صلى الله عليه وسلم) the society. His companions also exhibited human loving nature and. (صلى الله عليه وسلم) Prophet Holy the by them to provided roadmap the followed Ḥaḍrat Uthmān is one of those, who sacrificed themselves for the noble cause of peace. In this article, the remarkable efforts of Ḥaḍrat Uthmān for the maintainance of peace are highlighted. He was commited to peace even before Islām, and after accepting it, he played a vital role for the promotion and maintaince of peace. He the at (صلى الله عليه وسلم) prophet the of ambassador the as appointed was occasion of the Ḥudaybiyah Pact. Uthmān ruled a vast empire. Peace was a hallmark of his era. The evil plots against him surfaced only in the later years of his caliphate. These included objections regarding appointment and administration of the governers. He took every step to stop the disruption of peace, so much so, he did not allow the Muslims to fight for his defence, hence, sacrificed his life.
To reduce the cost of expensive solar cells, new, cheap, nontoxic and more abundant new materials have been proposed as suitable to use as absorber/window layers in solar cells. One such new material as absorber layer is tin antimony sulphide. We have attempted two methods for the growth of these films. A two stage process involving combinatorial sputtering of metallic targets tin and antimony followed by sulphurization by heating libraries in the presence of elemental sulphur in vacuum thermal evaporator. The sulphurized films were annealed for 1 hour in sealed quartz ampoule containing argon gas at low pressure (̴ 1 atm) at 425°C, 450°C, 475°C, 500°C and 525°C in tube furnace The 2nd method of combinatorial tin antimony sulphide thin films deposition is vacuum thermal evaporator. Thin films of Sn-Sb-S were synthesized on soda lime glass substrate from SnS and Sb2S3 binary compounds. SnS and Sb2S3 were evaporated in vacuum chamber at 10-4 torr without substrate heating simultaneously. The films were annealed in argon atmosphere at 85 °C, 105°C, 150°C, 275°C and 325°C inside glass ampoules. The elemental composition of the films was characterized by EDX and the XRD analysis was done for crystallographic phase’s confirmation. The XRD pattern of combinatorial tin antimony sulphide thin films shows that the as deposited films are amorphous while the low annealed temperature thin films are poly crystalline. The optical properties and thickness of the films were measured by ellipsometry techniques. Electrical properties were calculated from photoconductivity and hot point probe measurement. The photoconductivity of the library was calculated by photoconductivity spectrometer while hot point probe was used for the type of conductivity. It was found that Sb2Sn5S9 is a good candidate for photovoltaic application with a band gap of 1.15-2.5eV, absorption coefficient above 105cm-1, transmittance above 700nm and whose conductivity changing from n-type to p-type at high annealing temperature (325°C). The effect of air annealing of tin antimony sulphide was also studied in the current study. Tin antimony sulphide (SnSb2S4) thin films were deposited on glass substrate and annealed thermally at 150°C, 200°C and 300°C. The 300°C annealed films have good photoconductivity response and low transmittance. The band gap calculated by ellipsometry technique was found in the range of 2.65eV-1.45eV. The absorption coefficient of the films is ~105cm-1 while the refractive index and other optical properties of the library presented have good results. The influence of temperature dependence on Cadmium Sulfide deposited on corning 7059 glass substrate (1500C to 3000C) was also studied in this study. Transmittance, absorbance, band gap and reflectance were obtained by UV spectroscopy. The transmittance for 300nm to 1100nm thickness was grater then 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 Ωcm and 2-60 cm2V-1S-1 respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the n-type nature of the film